The Primary Origin of Excellent Dielectric Properties of (Co, Nb) Co-Doped TiO Ceramics: Electron-Pinned Defect Dipoles vs. Internal Barrier Layer Capacitor Effect.

(Co, Nb) co-doped rutile TiO (CoNTO) nanoparticles with low dopant concentrations were prepared using a wet chemistry method. A pure rutile TiO phase with a dense microstructure and homogeneous dispersion of the dopants was obtained. By co-doping rutile TiO with 0.5 at.% (Co, Nb), a very high dielectric permittivity of ε' ≈ 36,105 and a low loss tangent of tanδ ≈ 0.04 were achieved. The sample-electrode contact and resistive outer-surface layer (surface barrier layer capacitor) have a significant impact on the dielectric response in the CoNTO ceramics. The density functional theory calculation shows that the 2Co atoms are located near the oxygen vacancy, creating a triangle-shaped 2CoVTi complex defect. On the other hand, the substitution of TiO with Nb atoms can form a diamond-shaped 2Nb2Ti complex defect. These two types of complex defects are far away from each other. Therefore, the electron-pinned defect dipoles cannot be considered the primary origins of the dielectric response in the CoNTO ceramics. Impedance spectroscopy shows that the CoNTO ceramics are electrically heterogeneous, comprised of insulating and semiconducting regions. Thus, the dielectric properties of the CoNTO ceramics are attributed to the interfacial polarization at the internal insulating layers with very high resistivity, giving rise to a low loss tangent.