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燃烧法制备的铁/铌共掺杂金红石型二氧化钛纳米晶粉末:制备、表征及其巨大介电响应

Fe/Nb Co-doped rutile-TiO nanocrystalline powders prepared by a combustion process: preparation and characterization and their giant dielectric response.

作者信息

Nachaithong Theeranuch, Moontragoon Pairot, Chanlek Narong, Thongbai Prasit

机构信息

Materials Science and Nanotechnology Program, Faculty of Science, Khon Kaen University Khon Kaen 40002 Thailand.

Institute of Nanomaterials Research and Innovation for Energy (IN-RIE), Research Network of NANOTEC-KKU (RNN), Khon Kaen University Khon Kaen 40002 Thailand

出版信息

RSC Adv. 2020 Jun 30;10(42):24784-24794. doi: 10.1039/d0ra02963g. eCollection 2020 Jun 29.

Abstract

Fe/Nb co-doped TiO (FeNb-TO) nanocrystalline powders were prepared by a combustion process. A pure rutile-TiO phase of powders and sintered ceramics with a dense microstructure was achieved. Both co-dopants were homogeneously dispersed in the ceramic microstructure. The presence of oxygen vacancies was confirmed by Raman and X-ray photoelectron spectroscopy techniques. The low-frequency dielectric permittivity enhanced as co-doping concentration increased. The thermally activated giant-dielectric relaxation of FeNb-TO ceramics was observed. Removing the outer-surface layer had a slight effect on the dielectric properties of FeNb-TO ceramics. Density functional theory (DFT) calculation showed that, in the energy preferable configuration, the 2Fe atoms are located near the oxygen vacancy, forming a triangle-shaped FeVTi defect complex. This defect cluster was far away from the diamond-shaped 2Nb2Ti defect complex. Thus, the electron-pinned defect-dipoles (EPDD) cannot be formed. The giant-dielectric relaxation process of the FeNb-TO ceramics might be attributed to the interfacial polarization associated with electron hopping between Ti/Ti ions inside the grains, rather than due to the surface barrier layer capacitor (SBLC) or EPDD effect.

摘要

通过燃烧法制备了Fe/Nb共掺杂的TiO(FeNb-TO)纳米晶粉末。获得了具有致密微观结构的纯金红石型TiO相粉末和烧结陶瓷。两种共掺杂剂均均匀分散在陶瓷微观结构中。通过拉曼光谱和X射线光电子能谱技术证实了氧空位的存在。随着共掺杂浓度的增加,低频介电常数增大。观察到FeNb-TO陶瓷的热激活巨介电弛豫现象。去除外表面层对FeNb-TO陶瓷的介电性能有轻微影响。密度泛函理论(DFT)计算表明,在能量优选构型中,2个Fe原子位于氧空位附近,形成三角形的FeVTi缺陷复合体。该缺陷簇远离菱形的2Nb2Ti缺陷复合体。因此,无法形成电子钉扎缺陷偶极子(EPDD)。FeNb-TO陶瓷的巨介电弛豫过程可能归因于与晶粒内部Ti/Ti离子之间电子跳跃相关的界面极化,而不是由于表面势垒层电容器(SBLC)或EPDD效应。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1f89/9055153/d866a6f22f9f/d0ra02963g-f1.jpg

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