Yang Xiaokun, Yang Ji, Khan Jahangeer, Deng Hui, Yuan Shengjie, Zhang Jian, Xia Yong, Deng Feng, Zhou Xue, Umar Farooq, Jin Zhixin, Song Haisheng, Cheng Chun, Sabry Mohamed, Tang Jiang
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Luoyu Road 1037, Wuhan, 430074, People's Republic of China.
Department of Materials Science and Engineering and Shenzhen Key Laboratory of Nanoimprint Technology, South University of Science and Technology, Shenzhen, 518055, People's Republic of China.
Nanomicro Lett. 2020 Jan 24;12(1):37. doi: 10.1007/s40820-020-0372-z.
The recent emerging progress of quantum dot ink (QD-ink) has overcome the complexity of multiple-step colloidal QD (CQD) film preparation and pronouncedly promoted the device performance. However, the detrimental hydroxyl (OH) ligands induced from synthesis procedure have not been completely removed. Here, a halide ligand additive strategy was devised to optimize QD-ink process. It simultaneously reduced sub-bandgap states and converted them into iodide-passivated surface, which increase carrier mobility of the QDs films and achieve thicker absorber with improved performances. The corresponding power conversion efficiency of this optimized device reached 10.78%. (The control device was 9.56%.) Therefore, this stratege can support as a candidate strategy to solve the QD original limitation caused by hydroxyl ligands, which is also compatible with other CQD-based optoelectronic devices.
量子点墨水（QD-ink）最近取得的进展克服了多步胶体量子点（CQD）薄膜制备的复杂性，并显著提升了器件性能。然而，合成过程中引入的有害羟基（OH）配体尚未被完全去除。在此，设计了一种卤化物配体添加剂策略来优化QD-ink工艺。该策略同时减少了子带隙态，并将它们转化为碘化物钝化表面，这提高了量子点薄膜的载流子迁移率，并实现了具有更好性能的更厚吸收层。这种优化器件的相应功率转换效率达到了10.78%。（对照器件为9.56%。）因此，该策略可作为解决由羟基配体导致的量子点原始局限性的候选策略，并且还与其他基于CQD的光电器件兼容。
