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用于二维晶体管的高分辨率范德华模板光刻技术。

High-Resolution Van der Waals Stencil Lithography for 2D Transistors.

作者信息

Song Wenjing, Kong Lingan, Tao Quanyang, Liu Qing, Yang Xiangdong, Li Jia, Duan Huigao, Duan Xidong, Liao Lei, Liu Yuan

机构信息

Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, P. R. China.

National Engineering Research Center for High Efficiency Grinding, State-Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, School of Mechanical and Vehicle Engineering, Hunan University, Changsha, 410082, P. R. China.

出版信息

Small. 2021 Jul;17(29):e2101209. doi: 10.1002/smll.202101209. Epub 2021 Jun 17.

DOI:10.1002/smll.202101209
PMID:34142437
Abstract

2D semiconductors have attracted tremendous attention as an atomically thin channel for transistors with superior immunity to short-channel effects. However, with atomic thin structure, the delicate 2D lattice is not fully compatible with conventional lithography processes that typically involve high-energy photon/electron radiation and unavoidable polymer residues, posing a key limitation for high performance 2D transistors. Here, a novel van der Waals (vdW) stencil lithography technique based on dry mask lamination process is developed. By pre-fabricating polymethyl methacrylate (PMMA) resist with designed patterns, the whole PMMA mask layers could be mechanically released from the sacrifice wafer and physically laminated on top of various 2D semiconductors. The vdW stencil lithography ensures pristine 2D surface without any high-energy electron/photon radiation, polymer residues, or chemical doping effects in conventional lithography process; and the soft nature of PMMA enables intimate contact between the mask and the 2D materials without physical gap, leading to ultra-high resolution down to 60 nm. Together, by applying vdW stencil lithography for 2D semiconductors, high performance transistors are demonstrated. Our method not only demonstrates improved 2D transistor performance without lithography induced damages, but also provides a new vdW stencil lithography technique for 2D materials with high resolution.

摘要

二维半导体作为一种对短沟道效应具有卓越免疫力的原子级薄晶体管沟道,已引起了极大关注。然而,由于其原子级薄的结构,这种精细的二维晶格与传统光刻工艺并不完全兼容,传统光刻工艺通常涉及高能光子/电子辐射以及不可避免的聚合物残留,这对高性能二维晶体管构成了关键限制。在此,基于干掩膜层压工艺开发了一种新型范德华(vdW)模板光刻技术。通过预制备具有设计图案的聚甲基丙烯酸甲酯(PMMA)抗蚀剂,整个PMMA掩膜层可以从牺牲晶圆上机械剥离,并物理层压在各种二维半导体之上。vdW模板光刻确保了二维表面的原始状态,在传统光刻工艺中不会产生任何高能电子/光子辐射、聚合物残留或化学掺杂效应;并且PMMA的柔软性质使得掩膜与二维材料之间能够紧密接触而没有物理间隙,从而实现低至60纳米的超高分辨率。通过将vdW模板光刻应用于二维半导体,展示了高性能晶体管。我们的方法不仅展示了在无光刻诱导损伤的情况下二维晶体管性能的提升,还为二维材料提供了一种具有高分辨率的新型vdW模板光刻技术。

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