Han Seong-Joo, Han Joon-Kyu, Kim Myung-Su, Yun Gyeong-Jun, Yu Ji-Man, Tcho Il-Woong, Seo Myungsoo, Lee Geon-Beom, Choi Yang-Kyu
School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea.
Sci Rep. 2021 Jun 21;11(1):13018. doi: 10.1038/s41598-021-92378-7.
A ternary logic decoder (TLD) is demonstrated with independently controlled double-gate (ICDG) silicon-nanowire (Si-NW) MOSFETs to confirm a feasibility of mixed radix system (MRS). The TLD is essential component for realization of the MRS. The ICDG Si-NW MOSFET resolves the limitations of the conventional multi-threshold voltage (multi-V) schemes required for the TLD. The ICDG Si-NW MOSFETs were fabricated and characterized. Afterwards, their electrical characteristics were modeled and fitted semi-empirically with the aid of SILVACO ATLAS TCAD simulator. The circuit performance and power consumption of the TLD were analyzed using ATLAS mixed-mode TCAD simulations. The TLD showed a power-delay product of 35 aJ for a gate length (L) of 500 nm and that of 0.16 aJ for L of 14 nm. Thanks to its inherent CMOS-compatibility and scalability, the TLD based on the ICDG Si-NW MOSFETs would be a promising candidate for a MRS using ternary and binary logic.
利用独立控制的双栅(ICDG)硅纳米线(Si-NW)MOSFET演示了一种三值逻辑解码器(TLD),以证实混合基数系统(MRS)的可行性。TLD是实现MRS的关键组件。ICDG Si-NW MOSFET解决了TLD所需的传统多阈值电压(multi-V)方案的局限性。制造并表征了ICDG Si-NW MOSFET。之后,借助SILVACO ATLAS TCAD模拟器对其电学特性进行了半经验建模和拟合。使用ATLAS混合模式TCAD模拟分析了TLD的电路性能和功耗。对于500 nm的栅长(L),TLD的功率延迟积为35 aJ,对于14 nm的L,功率延迟积为0.16 aJ。由于其固有的CMOS兼容性和可扩展性,基于ICDG Si-NW MOSFET的TLD将是使用三值和二值逻辑的MRS的有前途的候选者。