Tamisier Marc, Schmidt Matthias, Vogt Carsten, Kümmel Steffen, Stryhanyuk Hryhoriy, Musat Niculina, Richnow Hans-Hermann, Musat Florin
Department of Isotope Biogeochemistry, Helmholtz Centre for Environmental Research - UFZ, Permoserstr. 15, Leipzig, 04318, Germany.
Environ Microbiol. 2022 Feb;24(2):583-595. doi: 10.1111/1462-2920.15658. Epub 2021 Jul 14.
Carbon and hydrogen stable isotope effects associated with methane formation by the corrosive archaeon Methanobacterium strain IM1 were determined during growth with hydrogen and iron. Isotope analyses were complemented by structural, elemental and molecular composition analyses of corrosion crusts. During growth with H , strain IM1 formed methane with average δ C of -43.5‰ and δ H of -370‰. Corrosive growth led to methane more depleted in C, with average δ C ranging from -56‰ to -64‰ during the early and the late growth phase respectively. The corresponding δ H were less impacted by the growth phase, with average values ranging from -316 to -329‰. The stable isotope fractionation factors, , were 1.026 and 1.042 for hydrogenotrophic and corrosive growth respectively. Corrosion crusts formed by strain IM1 have a domed structure, appeared electrically conductive and were composed of siderite, calcite and iron sulfide, the latter formed by precipitation of sulfide (from culture medium) with ferrous iron generated during corrosion. Strain IM1 cells were found attached to crust surfaces and encrusted deep inside crust domes. Our results may assist to diagnose methanogens-induced corrosion in the field and suggest that intrusion of sulfide in anoxic settings may stimulate corrosion by methanogenic archaea via formation of semiconductive crusts.
在嗜铁古菌Methanobacterium菌株IM1利用氢气和铁生长过程中,测定了与甲烷形成相关的碳和氢稳定同位素效应。通过对腐蚀结壳的结构、元素和分子组成分析对同位素分析进行了补充。在利用H₂生长过程中,IM1菌株形成的甲烷平均δ¹³C为-43.5‰,δ²H为-370‰。腐蚀生长导致甲烷的¹³C更加贫化,在生长早期和晚期平均δ¹³C分别为-56‰至-64‰。相应的δ²H受生长阶段的影响较小,平均值为-316至-329‰。氢营养型生长和腐蚀生长的稳定同位素分馏因子α分别为1.026和1.042。IM1菌株形成的腐蚀结壳具有穹顶结构,具有导电性,由菱铁矿、方解石和硫化铁组成,后者是由培养基中的硫化物与腐蚀过程中产生的亚铁沉淀形成的。发现IM1菌株细胞附着在结壳表面并包裹在结壳穹顶的深处。我们的结果可能有助于在现场诊断产甲烷菌引起的腐蚀,并表明在缺氧环境中硫化物的侵入可能通过形成半导体结壳刺激产甲烷古菌的腐蚀。