Shih Yu-Tai, Lin Der-Yuh, Li Yu-Cheng, Tseng Bo-Chang, Hwang Sheng-Beng
Department of Physics, National Changhua University of Education, Changhua 500207, Taiwan.
Department of Electronic Engineering, National Changhua University of Education, Changhua 500208, Taiwan.
Nanomaterials (Basel). 2022 Apr 23;12(9):1442. doi: 10.3390/nano12091442.
Tin disulfide (SnS) is a promising semiconductor for use in nanoelectronics and optoelectronics. Doping plays an essential role in SnS applications, because it can increase the functionality of SnS by tuning its original properties. In this study, the effect of zinc (Zn) doping on the photoelectric characteristics of SnS crystals was explored. The chemical vapor transport method was adopted to grow pristine and Zn-doped SnS crystals. Scanning electron microscopy images indicated that the grown SnS crystals were layered materials. The ratio of the normalized photocurrent of the Zn-doped specimen to that of the pristine specimen increased with an increasing illumination frequency, reaching approximately five at 10 Hz. Time-resolved photocurrent measurements revealed that the Zn-doped specimen had shorter rise and fall times and a higher current amplitude than the pristine specimen. The photoresponsivity of the specimens increased with an increasing bias voltage or decreasing laser power. The Zn-doped SnS crystals had 7.18 and 3.44 times higher photoresponsivity, respectively, than the pristine crystals at a bias voltage of 20 V and a laser power of 4 × 10 W. The experimental results of this study indicate that Zn doping markedly enhances the optical response of SnS layered crystals.
二硫化锡（SnS）是一种在纳米电子学和光电子学领域具有应用前景的半导体。掺杂在SnS的应用中起着至关重要的作用，因为它可以通过调节SnS的原始特性来增强其功能。在本研究中，探究了锌（Zn）掺杂对SnS晶体光电特性的影响。采用化学气相传输法生长原始的和Zn掺杂的SnS晶体。扫描电子显微镜图像表明，生长的SnS晶体是层状材料。Zn掺杂样品的归一化光电流与原始样品的归一化光电流之比随光照频率的增加而增加，在10 Hz时达到约5。时间分辨光电流测量结果表明，Zn掺杂样品的上升和下降时间比原始样品短，电流幅度更高。样品的光响应度随偏置电压的增加或激光功率的降低而增加。在20 V偏置电压和4×10 W激光功率下，Zn掺杂的SnS晶体的光响应度分别比原始晶体高7.18倍和3.44倍。本研究的实验结果表明，Zn掺杂显著增强了SnS层状晶体的光学响应。
