Naz Gul, Asghar Hafsa, Ramzan Muhammad, Arshad Muhammad, Ahmed Rashid, Tahir Muhammad Bilal, Haq Bakhtiar Ul, Baig Nadeem, Jalil Junaid
Institute of Physics, Faculty of Science, The Islamia University of Bahawalpur, Baghdad-ul-Jadid Campus, Bahawalpur 63100, Pakistan.
Nanosciences and Nanotechnology Department, National Centre for Physics, Quaid-i-Azam University Islamabad, Pakistan.
Beilstein J Nanotechnol. 2021 Jul 1;12:624-632. doi: 10.3762/bjnano.12.51. eCollection 2021.
Silver nanowires (AgNWs) with ultrahigh purity and high yield were successfully synthesized by employing a modified facile polyol method using PVP as a capping and stabilizing agent. The reaction was carried out at a moderate temperature of 160 °C under mild stirring for about 3 h. The prepared AgNWs exhibited parallel alignment on a large scale and were characterized by UV-vis spectroscopy, scanning electron microscopy (SEM), X-ray diffraction (XRD), and PL spectroscopy. The luminescent AgNWs exhibited red emission, which was accredited to deep holes. The SEM results confirmed the formation of AgNWs of 3.3 to 4.7 µm in length with an average diameter of about 86 nm, that is, the aspect ratio values of the AgNWs exceeded 45. An ink consisting of hydroxyethyl cellulose (HEC) and AgNWs was transferred to polyethylene terephthalate (PET) films by simple mechanical pressing. The PET films retained transparency and flexibility after the ink coating. The maximum transmittance value of as-prepared PET films in the visible region was estimated to be about 92.5% with a sheet resistance value of ca. 20 Ω/sq. This makes the films a potential substitute to commonly used expensive indium tin oxide (ITO) in the field of flexible optoelectronics.
采用以聚乙烯吡咯烷酮（PVP）作为封端和稳定剂的改进型简易多元醇法，成功合成了超高纯度和高产率的银纳米线（AgNWs）。反应在160℃的适中温度下，于温和搅拌条件下进行约3小时。所制备的AgNWs大规模呈现平行排列，并通过紫外可见光谱、扫描电子显微镜（SEM）、X射线衍射（XRD）和光致发光光谱（PL）进行表征。发光的AgNWs呈现红色发射，这归因于深空穴。SEM结果证实形成了长度为3.3至4.7μm、平均直径约为86nm的AgNWs，即AgNWs的纵横比超过45。由羟乙基纤维素（HEC）和AgNWs组成的油墨通过简单的机械压制转移到聚对苯二甲酸乙二酯（PET）薄膜上。油墨涂层后，PET薄膜保持了透明度和柔韧性。所制备的PET薄膜在可见光区域的最大透过率值估计约为92.5%，方阻约为20Ω/sq。这使得这些薄膜成为柔性光电子领域中常用的昂贵氧化铟锡（ITO）的潜在替代品。
