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一种用于制备取向精确的扭曲异质结构的简单制造策略。

A simple fabrication strategy for orientationally accurate twisted heterostructures.

作者信息

Debnath Rahul, Sett Shaili, Biswas Rabindra, Raghunathan Varun, Ghosh Arindam

机构信息

Department of Physics, Indian Institute of Science, Bangalore 560012, India.

Department of Electrical and Communication Engineering, Indian Institute of Science, Bangalore 560012, India.

出版信息

Nanotechnology. 2021 Aug 18;32(45). doi: 10.1088/1361-6528/ac1756.

Abstract

Van der Waals (vdW) heterostructure is a type of metamaterial where multiple layers of 2D materials are vertically aligned at controlled misorientation. The relative rotation in between the adjacent layers, or the twist angle between them plays a crucial role in changing the electronic band structure of the superlattice. The assembly of multi-layers of precisely twisted two dimensional layered materials requires knowledge of the atomic structure at the edge of the flake. It may be artificially created by the 'tear and stack' process. Otherwise, the crystallographic orientation needs to be determined through invasive processes such as transmission electron microscopy or scanning tunneling microscopy, and via second-harmonic generation (SHG). Here, we demonstrate a simple and elegant transfer protocol using only an optical microscope as a edge identifier tool through which, controlled transfer of twisted homobilayer and heterobilayer transition metal dichalcogenides is performed with close to 100% yield. The fabricated twisted vdW heterostructures have been characterized by SHG, Raman spectroscopy and photoluminiscence spectroscopy, confirming the desired twist angle within ∼0.5° accuracy. The presented method is reliable, quick and prevents the use of invasive tools which is desirable for reproducible device functionalities.

摘要

范德华(vdW)异质结构是一种超材料,其中多层二维材料以可控的错取向垂直排列。相邻层之间的相对旋转,即它们之间的扭转角,在改变超晶格的电子能带结构中起着关键作用。精确扭转的二维层状材料多层的组装需要了解薄片边缘的原子结构。它可以通过“撕裂和堆叠”过程人工创建。否则,晶体取向需要通过诸如透射电子显微镜或扫描隧道显微镜等侵入性过程以及通过二次谐波产生(SHG)来确定。在这里,我们展示了一种简单而巧妙的转移方案,仅使用光学显微镜作为边缘识别工具,通过该工具可以以接近100%的产率进行扭转的同质双层和异质双层过渡金属二硫属化物的可控转移。所制备的扭转vdW异质结构已通过SHG、拉曼光谱和光致发光光谱进行了表征,确认了所需扭转角的精度在约0.5°以内。所提出的方法可靠、快速,并且避免了使用侵入性工具,这对于可重复的器件功能是理想的。

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