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钴掺杂CsPbCl纳米结构的光学、电化学和光催化性能:一种一锅合成方法。

Optical, electrochemical and photocatalytic properties of cobalt doped CsPbCl nanostructures: a one-pot synthesis approach.

作者信息

Bhat Aadil Ahmad, Khandy Shakeel Ahmad, Islam Ishtihadah, Tomar Radha

机构信息

School of Studies in Chemistry, Jiwaji University, Gwalior, M.P, 474011, India.

Department of Physics, National Taiwan University, Taipei, 10617, Taiwan.

出版信息

Sci Rep. 2021 Aug 13;11(1):16473. doi: 10.1038/s41598-021-95088-2.

Abstract

The present manuscript aims at the synthesis of cesium based halide perovskite nanostructures and the effect of cobalt doping on the structural, optical, lumnisent, charge storage and photocatalytic properties. In a very first attempt, we report the solvothermal synthesis of Co doped CsPbCl nanostructures under subcritical conditions. The structural features were demonstrated by X-ray diffraction (XRD) Surface morphology determined cubic shape of the synthesized particles. Doping is an excellent way to modify the properties of host material in particular to the electronic structure or optical properties. Incorporation of Co ions in the perovskite structure tunes the optical properties of the nanostructures making this perovskite a visible light active material (Eg = 1.6 eV). This modification in the optical behaviour is the result of size effect, the crystallite size of the doped nanostructures increases with cobalt doping concentration. Photolumniscance (PL) study indicated that CsPbCl exhibited Blue emission. Thermogravametric analysis (TGA) revealed that the nanostructures are quite stable at elavated temperatures. The electrochemical performance depicts the pseudocapacative nature of the synthesized nanostructures and can used for charge storage devices. The charge storage capability showed direct proportionality with cobalt ion concentration. And Finally the photocatalytic performance of synthesized material shows superior catalytic ability degrading 90% of methylene blue (MB) dye in 180 min under visible light conditions.

摘要

本手稿旨在合成铯基卤化物钙钛矿纳米结构以及钴掺杂对其结构、光学、发光、电荷存储和光催化性能的影响。在首次尝试中,我们报道了在亚临界条件下溶剂热合成钴掺杂的CsPbCl纳米结构。通过X射线衍射(XRD)表征了其结构特征,表面形态确定了合成颗粒为立方形状。掺杂是改变主体材料性能,特别是电子结构或光学性能的一种极佳方法。在钙钛矿结构中引入钴离子可调节纳米结构的光学性能,使这种钙钛矿成为一种可见光活性材料(Eg = 1.6 eV)。这种光学行为的改变是尺寸效应的结果,掺杂纳米结构的微晶尺寸随钴掺杂浓度的增加而增大。光致发光(PL)研究表明CsPbCl呈现蓝色发射。热重分析(TGA)表明纳米结构在升高的温度下相当稳定。电化学性能表明合成的纳米结构具有赝电容性质,可用于电荷存储器件。电荷存储能力与钴离子浓度成正比。最后,合成材料的光催化性能显示出优异的催化能力,在可见光条件下180分钟内可降解90%的亚甲基蓝(MB)染料。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f2cd/8363650/8030784c8393/41598_2021_95088_Fig1_HTML.jpg

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