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水热生长的铜掺杂镍锰氧化物钙钛矿纳米结构,适用于光电、光致发光和电化学性能。

Hydrothermally grown Cu doped NiMnO perovskite nanostructures suitable for optoelectronic, photoluminescent and electrochemical properties.

作者信息

Upadhyay Shilpi, Assadullah Insaaf, Tomar Radha

机构信息

School of Studies in Chemistry, Jiwaji University, Gwalior, M.P, 474011, India.

出版信息

Sci Rep. 2024 Mar 28;14(1):7415. doi: 10.1038/s41598-024-52132-1.

Abstract

Transition metal-based perovskites have emerged as highly promising and economically advantageous semiconductor materials due to their exceptional performance in optoelectronics, photovoltaic, photocatalysis, and photoluminescence. In this study, we employed a microwave-assisted hydrothermal process to produce a Cu-doped NiMnO nanocomposite electrode material. The appearance of a peak corresponding to the (110) plane with a 2θ value of 36.6° confirmed the growth of the rhombohedral NiMnO crystal structure. The presence of metal-oxygen bonds in NiMnO was confirmed through FTIR spectra. XPS validates the chemical composition, providing additional support for the results obtained from XRD and FT-IR analyses. FE-SEM affirmed the anisotropic growth of small sphere-like structures that agglomerated to form broccoli-like shapes. Cu doping modified the band gap, reducing it from 2.2 to 1.7 eV and enhancing its photoluminescent (PL) activity by introducing defects. The increase in PL intensity (visible light luminescent intensity) can be attributed to a concurrent rise in complex defects and the rate of recombination of electron-hole pairs. Finally, the electrochemical activity demonstrated the pseudo-capacitor behavior of the synthesized material, with capacitance values increasing as the copper (Cu) content in the parent lattice increased.

摘要

基于过渡金属的钙钛矿由于在光电子学、光伏、光催化和光致发光方面的卓越性能,已成为极具前景且经济上具有优势的半导体材料。在本研究中,我们采用微波辅助水热法制备了一种铜掺杂的镍锰氧化物纳米复合电极材料。2θ值为36.6°时对应(110)面的峰的出现证实了菱面体镍锰氧化物晶体结构的生长。通过傅里叶变换红外光谱(FTIR)证实了镍锰氧化物中金属 - 氧键的存在。X射线光电子能谱(XPS)验证了化学成分,为从X射线衍射(XRD)和傅里叶变换红外光谱(FT - IR)分析获得的结果提供了额外支持。场发射扫描电子显微镜(FE - SEM)证实了小球状结构的各向异性生长,这些结构聚集形成了西兰花状形状。铜掺杂改变了带隙,使其从2.2电子伏特降低到1.7电子伏特,并通过引入缺陷增强了其光致发光(PL)活性。PL强度(可见光发光强度)的增加可归因于复合缺陷和电子 - 空穴对复合率的同时增加。最后,电化学活性证明了合成材料的赝电容行为,电容值随着母体晶格中铜(Cu)含量的增加而增加。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1ec3/10978829/7be258f92879/41598_2024_52132_Fig1_HTML.jpg

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