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锰掺杂CsPbCl的结构、电子和光学性质研究:理论与实验

Investigation of the structural, electronic, and optical properties of Mn-doped CsPbCl: theory and experiment.

作者信息

Pandey Nivedita, Kumar Abhishek, Chakrabarti Subhananda

机构信息

Department of Electrical Engineering, Indian Institute of Technology Bombay India-400076

出版信息

RSC Adv. 2019 Sep 18;9(51):29556-29565. doi: 10.1039/c9ra05685h.

Abstract

Wide energy gap inorganic halide perovskites have become emerging candidates for potential applications in modern optoelectronics devices. However, to date, these semiconducting compounds have not been explored theoretically to a significant extent. Herein, we performed computations to explain the structural, electronic and optical behaviour of inorganic CsPbCl and Mn-doped CsPbCl nanocrystals (NCs). We also synthesized these NCs and further validated our experimental results with density functional theory (DFT) calculations. The results provide insight into the effect of Mn doping on the important properties of CsPbCl NCs such as their lattice parameter, electronic band structure, density of states, dielectric constant, absorption coefficient and refractive index. After geometry optimization using the Limited-memory Broyden-Fletcher-Goldfarb-Shanno (LBFGS) algorithm, a reduction in the lattice parameter from 5.605 Å to 5.574 Å was observed after doping Mn in the CsPbCl NCs, which is in good agreement with the calculated results from the X-ray diffraction (XRD) pattern (5.610 Å to 5.580 Å) and high-resolution transmission electron microscopy (HRTEM) images (5.603 Å to 5.575 Å). The incorporation of Mn in CsPbCl was observed in the electronic band structure in the form of additional states present in the energy gap and an increment in the band gap of the CsPbCl NCs. This result is consistent with the photoluminescence (PL) plot, which showed dual color emission in the case of the Mn-doped CsPbCl, which is attributed to the Mn d-band to d-band transition. The partial density of states (PDOS) of the Mn-doped CsPbCl NCs clearly indicates the contribution of the Mn 3d orbitals to the upper valence band and conduction band together with the contribution of the Pb 6p and Cl 3p orbitals. Moreover, a blue-shift phenomenon was observed from the dielectric constant and absorption coefficient spectra, which is due to the incorporation of Mn in CsPbCl. Also, a significant peak was observed in the absorption coefficient and dielectric constant spectra around 2.08 eV, which is in good agreement with the PL plot. This DFT study with experimental observation provides a way to investigate this type of compound and to tailor its interesting characteristics through doping.

摘要

宽禁带无机卤化物钙钛矿已成为现代光电器件潜在应用的新兴候选材料。然而,迄今为止,这些半导体化合物在理论上尚未得到充分探索。在此,我们进行了计算,以解释无机CsPbCl和Mn掺杂的CsPbCl纳米晶体(NCs)的结构、电子和光学行为。我们还合成了这些NCs,并通过密度泛函理论(DFT)计算进一步验证了我们的实验结果。结果深入了解了Mn掺杂对CsPbCl NCs重要性质的影响,如晶格参数、电子能带结构、态密度、介电常数、吸收系数和折射率。使用有限内存布罗伊登-弗莱彻-戈德法布-肖诺(LBFGS)算法进行几何优化后,在CsPbCl NCs中掺杂Mn后,观察到晶格参数从5.605 Å减小到5.574 Å,这与X射线衍射(XRD)图谱(5.610 Å至5.580 Å)和高分辨率透射电子显微镜(HRTEM)图像(5.603 Å至5.575 Å)的计算结果高度一致。在电子能带结构中观察到Mn掺入CsPbCl,表现为禁带中出现额外的态以及CsPbCl NCs的带隙增加。这一结果与光致发光(PL)图谱一致,该图谱显示Mn掺杂的CsPbCl出现双色发射,这归因于Mn的d带至d带跃迁。Mn掺杂的CsPbCl NCs的部分态密度(PDOS)清楚地表明了Mn 3d轨道对价带上部和导带的贡献,以及Pb 6p和Cl 3p轨道的贡献。此外,在介电常数和吸收系数光谱中观察到蓝移现象,这是由于Mn掺入CsPbCl所致。而且,在吸收系数和介电常数光谱中,在2.08 eV左右观察到一个明显的峰值,这与PL图谱高度一致。这项结合实验观察的DFT研究为研究这类化合物并通过掺杂调整其有趣特性提供了一种方法。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7633/9071989/44761b763cc4/c9ra05685h-f1.jpg

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