Shirley Eric L
Sensor Science Division, National Institute of Standards and Technology, 100 Bureau Drive, MS 8441, Gaithersburg, MD 20899-8441, USA.
Radiat Phys Chem Oxf Engl 1993. 2020 Feb;167. doi: 10.1016/j.radphyschem.2019.02.024.
Trends in the zeroth frequency moment of the imaginary part of the dielectric function are studied for a wide range of metals, semiconductors and insulators. These results are combined with estimates for the inverse-first moment (related by Kramers-Kronig relations to the static dielectric function) and knowledge of the first moment from the f-sum rule. Matching all three moments allows for construction of a model dielectric function that reasonably predicts the loss function at different values of momentum and lifetime damping effects on occupied and unoccupied electron states. This is demonstrated by comparing model results and results of detailed, first-principles calculations.
针对多种金属、半导体和绝缘体,研究了介电函数虚部零阶频率矩的变化趋势。这些结果与逆一阶矩的估计值(通过克拉默斯 - 克朗尼格关系与静态介电函数相关)以及从f和规则得到的一阶矩知识相结合。匹配所有这三个矩可以构建一个模型介电函数,该函数能够合理地预测在不同动量值下的损耗函数以及占据和未占据电子态上的寿命阻尼效应。通过比较模型结果和详细的第一性原理计算结果来证明这一点。