一种带有自适应无限脉冲响应刺激伪迹消除器的双向神经接口片上系统。
A Bidirectional Neural Interface SoC With Adaptive IIR Stimulation Artifact Cancelers.
作者信息
Samiei Aria, Hashemi Hossein
机构信息
Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA 90089 USA.
出版信息
IEEE J Solid-State Circuits. 2021 Jul;56(7):2142-2157. doi: 10.1109/jssc.2021.3056040. Epub 2021 Feb 9.
Abstract
We present a 180-nm CMOS bidirectional neural interface system-on-chip that enables simultaneous recording and stimulation with on-chip stimulus artifact cancelers. The front-end cancellation scheme incorporates a least-mean-square engine that adapts the coefficients of a 2-tap infinite-impulse-response filter to replicate the stimulation artifact waveform and subtract it at the front-end. Measurements demonstrate the efficacy of the canceler in mitigating artifacts up to 700 mV and reducing the front-end amplifier saturation recovery time in response to a 2.5 V artifact. Each recording channel houses a pair of adaptive infinite-impulse-response filters, which enable cancellation of the artifacts generated by the simultaneous operation of the 2 on-chip stimulators. The analog front-end consumes 2.5 W of power per channel, has a maximum gain of 50 dB and a bandwidth of 9.0 kHz with 6.2 V integrated input-referred noise.
摘要
我们展示了一种180纳米互补金属氧化物半导体双向神经接口片上系统，该系统能够通过片上刺激伪迹消除器实现同步记录和刺激。前端消除方案包含一个最小均方引擎，该引擎可调整两抽头无限脉冲响应滤波器的系数，以复制刺激伪迹波形并在前端将其减去。测量结果表明，该消除器在减轻高达700毫伏的伪迹以及减少响应2.5伏伪迹时前端放大器的饱和恢复时间方面具有有效性。每个记录通道都包含一对自适应无限脉冲响应滤波器，这使得能够消除由两个片上刺激器同时运行产生的伪迹。模拟前端每通道功耗为2.5瓦，最大增益为50分贝，带宽为9.0千赫，集成输入参考噪声为6.2伏。
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