Institute of Physics and Applied Physics, Yonsei University, Seoul, Republic of Korea.
Phys Chem Chem Phys. 2012 Nov 7;14(41):14202-6. doi: 10.1039/c2cp41544e.
We report on the fabrication of N,N'-ditridecyl-perylene-3,4:9,10-tetracarboxylic diimide-C13 (PTCDI-C13), n-channel organic thin-film transistors (OTFTs) with 30 nm Al(2)O(3) whose surface has been un-modified or modified with hexamethyldisilazane (HMDS) and thin hydrophobic CYTOP. Among all the devices, the OTFTs with CYTOP-modified dielectrics exhibit the most superior device performance and stability. The optimum post-annealing temperature for organic n-channels on CYTOP was also found to be as low as 80 °C, although the post-annealing was previously implemented at 120-140 °C for PTCDI domain growth in general. The low temperature of 80 °C hardly damages the CYTOP/n-channel organic interface which is deformed at a temperature higher than the glass transition temperature of CYTOP (∼110 °C). The pentacenequinone passivation layer turned out to be helpful to keep the interfacial trap density minimum, according to the photo-excited charge collection spectroscopy results for our 80 °C-annealed OTFTs with CYTOP-modified dielectrics.
我们报告了 N,N'-十二烷基-苝-3,4:9,10-二羧酸二酰亚胺-C13（PTCDI-C13）的制备，采用未经修饰或经六甲基二硅氮烷（HMDS）和疏水性 CYTOP 修饰的 30nm Al2O3 制造 n 通道有机薄膜晶体管（OTFT）。在所有器件中，经 CYTOP 修饰的介电层的 OTFT 表现出最优异的器件性能和稳定性。还发现，有机 n 通道在 CYTOP 上的最佳后退火温度低至 80°C，尽管先前通常在 120-140°C 下进行后退火以促进 PTCDI 畴的生长。80°C 的低温几乎不会损坏 CYTOP/n 通道有机界面，因为 CYTOP 的玻璃化转变温度（约 110°C）以上会使界面变形。根据我们对经 80°C 退火并经 CYTOP 修饰的介电层的 OTFT 的光激发电荷收集光谱结果，五氯苯醌钝化层有助于将界面陷阱密度保持在最低水平。
