Kozuka Yusuke, Sasaki Taisuke T, Tadano Terumasa, Fujioka Jun
Research Center for Materials Nanoarchitectonics, National Institute for Materials Science (NIMS), Tsukuba, Japan.
Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science (NIMS), Tsukuba, Japan.
Sci Technol Adv Mater. 2023 Oct 18;24(1):2265431. doi: 10.1080/14686996.2023.2265431. eCollection 2023.
Topological insulators and semimetals are an interesting class of materials for new electronic and optical applications owing to their characteristic electromagnetic responses originating from the spin-orbit coupled band structures. However, topological electronic structures are rare in oxide materials despite their chemical stability being preferable for applications. In this study, given the theoretical prediction of Dirac bands in CaPdO, we investigate the fabrication and transport properties of SrPdO and CaPdO thin films as candidates of oxide Dirac semimetals. We have found that these materials are epitaxially grown on MgO (100) substrate under limited growth conditions by pulsed laser deposition. The transport properties show a weak temperature dependence, suggestive of narrow-gap properties, although unintentionally doped holes hinder us from revealing the presence of the Dirac band. Our study establishes the basic thermodynamics of thin-film fabrication of these materials and will lead to interesting properties characteristic of topological band structure by modulating the electronic structure by, for example, chemical substitutions or pressure.
拓扑绝缘体和半金属是一类有趣的材料,适用于新型电子和光学应用,这归因于它们源自自旋轨道耦合能带结构的独特电磁响应。然而,尽管氧化物材料的化学稳定性更适合应用,但其拓扑电子结构却很少见。在本研究中,鉴于理论预测CaPdO中存在狄拉克能带,我们研究了SrPdO和CaPdO薄膜作为氧化物狄拉克半金属候选材料的制备及其输运性质。我们发现,通过脉冲激光沉积,这些材料在有限的生长条件下外延生长在MgO(100)衬底上。尽管非故意掺杂的空穴阻碍我们揭示狄拉克能带的存在,但输运性质显示出较弱的温度依赖性,表明具有窄带隙特性。我们的研究确立了这些材料薄膜制备的基本热力学,并将通过例如化学取代或压力来调制电子结构,从而带来具有拓扑能带结构特征的有趣性质。