Effect of the Hf content on the microstructure and ferroelectric properties of HfZrO thin films using an all-inorganic aqueous precursor solution.

The synthesis of ferroelectric HfZrO (0 ≤ ≤ 0.50) thin films by chemical solution deposition (CSD) on the surface of Si (100) substrates using all-inorganic salt precursors, is demonstrated in this study. The effects of the Hf content on the microstructure and ferroelectric properties of the films were investigated. The results showed that as the Hf component increased, the root mean square (RMS) roughness as well as the m-phase proportion gradually improved. Near the main diffraction peak of 30.7°, a phase transition from the orthorhombic to the cubic phase, and then to the tetragonal phase occurred. The best ferroelectric behaviour was obtained in the HfZrO film with a Hf content of 14% after 10 field cycling. The HZO thin film exhibited the highest remanent polarization of 12.1 μC cm, accompanied by a relative permittivity of 31.8.