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通过使用纳米颗粒辅助的博世工艺制备兼具高疏水性和抗反射性的针状硅纳米线

Fabrication of Needle-Like Silicon Nanowires by Using a Nanoparticles-Assisted Bosch Process for Both High Hydrophobicity and Anti-Reflection.

作者信息

Zhang Zengxing, Liu Guohua, Wang Kaiying

机构信息

Department of microsystems, University of South-Eastern Norway, 3184 Horten, Norway.

Beijing Key Laboratory of Multiphase Flow and Heat Transfer for Low Grade Energy Utilization, North China Electric Power University, Beijing 102206, China.

出版信息

Micromachines (Basel). 2021 Aug 25;12(9):1009. doi: 10.3390/mi12091009.

DOI:10.3390/mi12091009
PMID:34577653
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8471489/
Abstract

In this work, a modified Bosch etching process is developed to create silicon nanowires. Au nanoparticles (NPs) formed by magnetron sputtering film deposition and thermal annealing were employed as the hard mask to achieve controllable density and high aspect ratios. Such silicon nanowire exhibits the excellent anti-reflection ability of a reflectance value of below 2% within a broad light wave range between 220 and 1100 nm. In addition, Au NPs-induced surface plasmons significantly enhance the near-unity anti-reflection characteristics, achieving a reflectance below 3% within the wavelength range of 220 to 2600 nm. Furthermore, the nanowire array exhibits super-hydrophobic behavior with a contact angle over ~165.6° without enforcing any hydrophobic chemical treatment. Such behavior yields in water droplets bouncing off the surface many times. These properties render this silicon nanowire attractive for applications such as photothermal, photocatalysis, supercapacitor, and microfluidics.

摘要

在这项工作中,开发了一种改进的博世蚀刻工艺来制备硅纳米线。通过磁控溅射薄膜沉积和热退火形成的金纳米颗粒(NPs)被用作硬掩膜,以实现可控的密度和高纵横比。这种硅纳米线在220至1100nm的宽光波范围内表现出优异的抗反射能力,反射率值低于2%。此外,金纳米颗粒诱导的表面等离子体显著增强了近乎完全的抗反射特性,在220至2600nm的波长范围内实现了低于3%的反射率。此外,纳米线阵列表现出超疏水行为,接触角超过约165.6°,无需进行任何疏水化学处理。这种行为使得水滴能够多次从表面弹起。这些特性使得这种硅纳米线在光热、光催化、超级电容器和微流体等应用中具有吸引力。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/31d1/8471489/e7e9d3ad12e0/micromachines-12-01009-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/31d1/8471489/deb2c7e4f4c0/micromachines-12-01009-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/31d1/8471489/2055bc1383e8/micromachines-12-01009-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/31d1/8471489/c30f68fe566c/micromachines-12-01009-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/31d1/8471489/83fba8657bb1/micromachines-12-01009-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/31d1/8471489/e7e9d3ad12e0/micromachines-12-01009-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/31d1/8471489/deb2c7e4f4c0/micromachines-12-01009-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/31d1/8471489/2055bc1383e8/micromachines-12-01009-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/31d1/8471489/c30f68fe566c/micromachines-12-01009-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/31d1/8471489/83fba8657bb1/micromachines-12-01009-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/31d1/8471489/e7e9d3ad12e0/micromachines-12-01009-g005.jpg

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本文引用的文献

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