Jha Pankaj K, Akbari Hamidreza, Kim Yonghwi, Biswas Souvik, Atwater Harry A
Thomas J. Watson Laboratory of Applied Physics and Materials Science, California Institute of Technology, Pasadena, CA 91125, United States of America.
Resnick Sustainability Institute, California Institute of Technology, Pasadena, CA 91125, United States of America.
Nanotechnology. 2021 Oct 20;33(1). doi: 10.1088/1361-6528/ac2b71.
Color centers in hexagonal boron nitride (BN) have emerged as promising candidates for single-photon emitters (SPEs) due to their bright emission characteristics at room temperature. In contrast to mono- and few-layeredBN, color centers in multi-layered flakes show superior emission characteristics such as higher saturation counts and spectral stability. Here, we report a method for determining both the axial position and three-dimensional dipole orientation of SPEs in thickBN flakes by tuning the photonic local density of states using vanadium dioxide (VO), a phase change material. Quantum emitters under study exhibit a strong surface-normal dipole orientation, providing some insight on the atomic structure ofBN SPEs, deeply embedded in thick crystals. Next, we optimized a hot pickup technique to reproducibly transfer theBN flake from VO/sapphire substrate onto SiO/Si substrate and relocated the same emitters. Our approach serves as a practical method to systematically characterize SPEs inBN prior to integration in quantum photonics systems.
由于六方氮化硼（BN）中的色心在室温下具有明亮的发射特性，已成为单光子发射器（SPE）的有前途的候选者。与单层和少层BN不同，多层薄片中的色心表现出优异的发射特性，如更高的饱和计数和光谱稳定性。在这里，我们报告了一种通过使用相变材料二氧化钒（VO）调节光子局域态密度来确定厚BN薄片中SPE的轴向位置和三维偶极子取向的方法。所研究的量子发射器表现出强烈的表面法线偶极子取向，这为深入嵌入厚晶体中的BN SPE的原子结构提供了一些见解。接下来，我们优化了一种热拾取技术，以可重复地将BN薄片从VO/蓝宝石衬底转移到SiO/Si衬底上，并重新定位相同的发射器。我们的方法是在量子光子学系统集成之前系统地表征BN中SPE的实用方法。
