Gritsienko Alexander V, Duleba Aliaksandr, Pugachev Mikhail V, Kurochkin Nikita S, Vlasov Igor I, Vitukhnovsky Alexei G, Kuntsevich Alexandr Yu
P. N. Lebedev Physical Institute of the Russian Academy of Sciences, 53 Leninskiy Pr., 119991 Moscow, Russia.
Moscow Institute of Physics and Technology, National Research University, 9 Institutskií Per., 141700 Dolgoprudnyí, Russia.
Nanomaterials (Basel). 2022 Dec 19;12(24):4495. doi: 10.3390/nano12244495.
Bright and stable emitters of single indistinguishable photons are crucial for quantum technologies. The origin of the promising bright emitters recently observed in hexagonal boron nitride (hBN) still remains unclear. This study reports pure single-photon sources in multi-layered hBN at room temperature that demonstrate high emission rates. The quantum emitters are introduced with argon beam treatment and air annealing of mechanically exfoliated hBN flakes with thicknesses of 5-100 nm. Spectral and time-resolved measurements reveal the emitters have more than 1 GHz of excited-to-ground state transition rate. The observed photoswitching between dark and bright states indicates the strong sensitivity of the emitter to the electrostatic environment and the importance of the indirect excitation for the photodynamics.
明亮且稳定的单个不可区分光子发射器对于量子技术至关重要。最近在六方氮化硼（hBN）中观察到的有前景的明亮发射器的起源仍不清楚。本研究报道了室温下多层hBN中的纯单光子源，其具有高发射率。通过对厚度为5 - 100 nm的机械剥离hBN薄片进行氩束处理和空气退火来引入量子发射器。光谱和时间分辨测量表明，发射器的激发态到基态跃迁速率超过1 GHz。观察到的暗态和亮态之间的光开关现象表明发射器对静电环境具有强烈敏感性，以及间接激发对光动力学的重要性。
