高能电子辐照对六方氮化硼中量子发射器的影响。
Effects of High-Energy Electron Irradiation on Quantum Emitters in Hexagonal Boron Nitride.
机构信息
School of Mathematical and Physical Sciences , University of Technology Sydney , Ultimo , New South Wales 2007 , Australia.
National Institutes for Quantum and Radiological Science and Technology , 1233 Watanuki , Takasaki , Gunma 370-1292 , Japan.
出版信息
ACS Appl Mater Interfaces. 2018 Jul 25;10(29):24886-24891. doi: 10.1021/acsami.8b07506. Epub 2018 Jun 19.
Hexagonal boron nitride (hBN) mono and multilayers are promising hosts for room-temperature single photon emitters (SPEs). In this work we explore high-energy (∼MeV) electron irradiation as a means to generate stable SPEs in hBN. We investigate four types of exfoliated hBN flakes-namely, high-purity multilayers, isotopically pure hBN, carbon-rich hBN multilayers and monolayered material-and find that electron irradiation increases emitter concentrations dramatically in all samples. Furthermore, the engineered emitters are located throughout hBN flakes (not only at flake edges or grain boundaries) and do not require activation by high-temperature annealing of the host material after electron exposure. Our results provide important insights into controlled formation of hBN SPEs and may aid in identification of their crystallographic origin.
六方氮化硼（hBN）单层和多层是室温单光子发射器（SPE）的理想宿主。在这项工作中，我们探索了高能（∼MeV）电子辐照作为在 hBN 中产生稳定 SPE 的一种手段。我们研究了四种类型的剥离 hBN 薄片，即高纯多层、同位素纯 hBN、富碳 hBN 多层和单层材料，并发现电子辐照在所有样品中都显著增加了发射器浓度。此外，工程化的发射器分布在整个 hBN 薄片中（不仅在薄片边缘或晶界处），并且不需要在电子辐照后对宿主材料进行高温退火来激活。我们的结果为 hBN SPE 的受控形成提供了重要的见解，并可能有助于确定它们的晶体学起源。
Zotero 插件