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六方氮化硼中原子缺陷的可调谐且高纯度室温单光子发射

Tunable and high-purity room temperature single-photon emission from atomic defects in hexagonal boron nitride.

作者信息

Grosso Gabriele, Moon Hyowon, Lienhard Benjamin, Ali Sajid, Efetov Dmitri K, Furchi Marco M, Jarillo-Herrero Pablo, Ford Michael J, Aharonovich Igor, Englund Dirk

机构信息

Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.

School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia.

出版信息

Nat Commun. 2017 Sep 26;8(1):705. doi: 10.1038/s41467-017-00810-2.

Abstract

Two-dimensional van der Waals materials have emerged as promising platforms for solid-state quantum information processing devices with unusual potential for heterogeneous assembly. Recently, bright and photostable single photon emitters were reported from atomic defects in layered hexagonal boron nitride (hBN), but controlling inhomogeneous spectral distribution and reducing multi-photon emission presented open challenges. Here, we demonstrate that strain control allows spectral tunability of hBN single photon emitters over 6 meV, and material processing sharply improves the single photon purity. We observe high single photon count rates exceeding 7 × 10 counts per second at saturation, after correcting for uncorrelated photon background. Furthermore, these emitters are stable to material transfer to other substrates. High-purity and photostable single photon emission at room temperature, together with spectral tunability and transferability, opens the door to scalable integration of high-quality quantum emitters in photonic quantum technologies.Inhomogeneous spectral distribution and multi-photon emission are currently hindering the use of defects in layered hBN as reliable single photon emitters. Here, the authors demonstrate strain-controlled wavelength tuning and increased single photon purity through suitable material processing.

摘要

二维范德华材料已成为固态量子信息处理设备的有前途的平台,具有非同寻常的异质组装潜力。最近,有人报道了层状六方氮化硼(hBN)中的原子缺陷产生的明亮且光稳定的单光子发射器,但控制不均匀的光谱分布和减少多光子发射面临着尚未解决的挑战。在这里,我们证明应变控制可使hBN单光子发射器的光谱可调谐超过6 meV,并且材料加工显著提高了单光子纯度。在校正不相关的光子背景后,我们观察到在饱和状态下单光子计数率高达每秒超过7×10次计数。此外,这些发射器在转移到其他衬底时是稳定的。室温下的高纯度和光稳定单光子发射,以及光谱可调谐性和可转移性,为光子量子技术中高质量量子发射器的可扩展集成打开了大门。不均匀的光谱分布和多光子发射目前阻碍了层状hBN中的缺陷用作可靠的单光子发射器。在这里,作者通过适当的材料加工证明了应变控制的波长调谐和单光子纯度的提高。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/65e6/5615041/bc8f099eb0fd/41467_2017_810_Fig1_HTML.jpg

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