Shiota Kohei, Inui Akito, Hosaka Yuta, Amano Ryoga, Ōnuki Yoshichika, Hedo Masato, Nakama Takao, Hirobe Daichi, Ohe Jun-Ichiro, Kishine Jun-Ichiro, Yamamoto Hiroshi M, Shishido Hiroaki, Togawa Yoshihiko
Department of Physics and Electronics, Osaka Prefecture University, 1-1 Gakuencho, Sakai, Osaka 599-8531, Japan.
Faculty of Science, University of the Ryukyus, Nishihara, Okinawa 903-0213, Japan.
Phys Rev Lett. 2021 Sep 17;127(12):126602. doi: 10.1103/PhysRevLett.127.126602.
A spin-polarized state is examined under charge current at room temperature without magnetic fields in chiral disilicide crystals NbSi_{2} and TaSi_{2}. We found that a long-range spin transport occurs over ten micrometers in these inorganic crystals. A distribution of crystalline grains of different handedness is obtained via location-sensitive electrical transport measurements. The sum rule holds in the conversion coefficient in the current-voltage characteristics. A diamagnetic nature of the crystals supports that the spin polarization is not due to localized electron spins but due to itinerant electron spins. A large difference in the strength of antisymmetric spin-orbit interaction associated with 4d electrons in Nb and 5d ones in Ta is oppositely correlated with that of the spin polarization. A robust protection of the spin polarization occurs over long distances in chiral crystals.
在手性二硅化物晶体NbSi₂和TaSi₂中，在室温且无磁场的情况下，对电荷电流下的自旋极化状态进行了研究。我们发现，在这些无机晶体中，长程自旋输运可发生超过十微米的距离。通过位置敏感的电输运测量，获得了不同手性晶粒的分布。电流-电压特性中的转换系数遵循求和规则。晶体的抗磁性表明，自旋极化不是由局域电子自旋引起的，而是由巡游电子自旋引起的。与Nb中的4d电子和Ta中的5d电子相关的反对称自旋-轨道相互作用强度的巨大差异与自旋极化强度呈相反的相关性。在手性晶体中，自旋极化在长距离上得到了强有力的保护。
