Zhang Lanxuan, Li Yingzhi, Hou Yu, Wang Yubing, Tao Min, Chen Bosong, Na Quanxin, Li Yuxuan, Zhi Zihao, Liu Xiaobin, Li Xueyan, Gao Fengli, Luo Xianshu, Lo Guo-Qiang, Song Junfeng
Opt Express. 2021 Sep 13;29(19):29755-29765. doi: 10.1364/OE.434067.
The optical power handling of an OPA scanning beam determines its targeted detection distance. So far, a limited number of investigations have been conducted on the restriction of the beam power. To the best of our knowledge, we for the first time in this paper explore the ability of the silicon photonics based OPA circuit for the high power application. A 64-channel SiN-Si based one-dimensional (1D) OPA chip has been designed to handle high beam power to achieve large scanning range. The chip was fabricated on the standard silicon photonics platform. The main lobe power of our chip can reach 720 mW and its peak side-lobe level (PSLL) is -10.33 dB. We obtain a wide scanning range of 110° in the horizontal direction at 1550 nm wavelength, with a compressed longitudinal divergence angle of each scanning beam of 0.02°.
光参量放大器（OPA）扫描光束的光功率处理能力决定了其目标探测距离。到目前为止，针对光束功率限制所开展的研究数量有限。据我们所知，本文首次探索了基于硅光子学的OPA电路在高功率应用方面的能力。已设计出一款基于SiN-Si的64通道一维（1D）OPA芯片，以处理高光束功率从而实现大扫描范围。该芯片是在标准硅光子学平台上制造的。我们芯片的主瓣功率可达720 mW，其峰值旁瓣电平（PSLL）为-10.33 dB。在1550 nm波长下，我们在水平方向获得了110°的宽扫描范围，每个扫描光束的压缩纵向发散角为0.02°。
