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基于噻吩和硒吩的共轭聚合物混合离子/电子导体。

Thiophene- and selenophene-based conjugated polymeric mixed ionic/electronic conductors.

作者信息

Sachinthani K A Niradha, Panchuk Jenny R, Wang Yuhang, Zhu Tong, Sargent Edward H, Seferos Dwight S

机构信息

Department of Chemistry, University of Toronto, 80 St. George Street, Toronto, Ontario, M5S 3H6, Canada.

Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada.

出版信息

J Chem Phys. 2021 Oct 7;155(13):134704. doi: 10.1063/5.0064858.

Abstract

Mixed ionic/electronic conductors (MIECs) are desirable materials for next-generation electronic devices and energy storage applications. Polymeric MIECs are attractive from the standpoint that their structure can be controlled and anticipated to have mechanically robust properties. Here, we prepare and investigate conjugated copolymers containing thiophene and selenophene repeat units and their homopolymer counterparts. Specifically, thiophene bearing a triethylene glycol (EG) side chain was polymerized and copolymerized with dodecyl thiophene/selenophene monomers. The synthesis leads to a class of copolymers that contain either S or Se and are blocky in nature. The Li-ion conductivity of ionically doped copolymers, P3DDT-s-P3(EG)T and P3DDS-s-P3(EG)T (9.7 × 10 and 8.2 × 10 S/cm, respectively), was 3-4 fold higher than that of the ionically doped constituent homopolymer, P3(EG)T (2.2 × 10 S/cm), at ambient conditions. The electronic conductivity of the oxidatively doped copolymers was significantly higher than that of the constituent homopolymer P3(EG)T, and most notably, P3DDS-s-P3(EG)T reached ∼7 S/cm, which is the same order of magnitude as poly(3-dodecylthiophene) and poly(3-dodecylselenophene), which are the highest oxidatively doped conductors based on control experiments. Our findings provide implications for designing new MIECs based on copolymerization and the incorporation of heavy atom heterocycles.

摘要

混合离子/电子导体(MIECs)是下一代电子器件和能量存储应用的理想材料。聚合物MIECs因其结构可控且预计具有机械稳健性能而颇具吸引力。在此,我们制备并研究了含有噻吩和硒吩重复单元的共轭共聚物及其相应的均聚物。具体而言,带有三甘醇(EG)侧链的噻吩与十二烷基噻吩/硒吩单体进行聚合和共聚。该合成方法得到了一类含有S或Se且本质上为嵌段结构的共聚物。在环境条件下,离子掺杂共聚物P3DDT-s-P3(EG)T和P3DDS-s-P3(EG)T的锂离子电导率(分别为9.7×10和8.2×10 S/cm)比离子掺杂的组成均聚物P3(EG)T(2.2×10 S/cm)高3至4倍。氧化掺杂共聚物的电子电导率显著高于组成均聚物P3(EG)T,最值得注意的是,P3DDS-s-P3(EG)T达到约7 S/cm,这与基于对照实验的最高氧化掺杂导体聚(3-十二烷基噻吩)和聚(3-十二烷基硒吩)处于同一数量级。我们的研究结果为基于共聚和引入重原子杂环设计新型MIECs提供了启示。

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