Han Young Joon, Kang Kyung-Tae, Cho Kwan Hyun
Manufacturing Process Platform R&D Department, Korea Institute of Industrial Technology (KITECH), 143, Hanggaul-ro, Sangnok-gu, Ansan-si 15588, Republic of Korea.
ACS Appl Mater Interfaces. 2021 Oct 27;13(42):50111-50120. doi: 10.1021/acsami.1c14147. Epub 2021 Oct 12.
It was demonstrated through a comparison between the spin-coated and inkjet-printed quantum-dot light-emitting diodes' (QLED) performance analysis outcomes that the annealing temperature of a zinc oxide nanoparticle (ZnO NP) electron transport layer (ETL) optimized for intense pulsed light (IPL) via a post-treatment differs depending on the film-formation method used. For a naturally dried ZnO NP ETL formulated without annealing, different film morphologies were observed according to the film-formation method of spin coating and inkjet printing, and the surface-roughness root mean square (RMS) value was increased in an IPL post-treatment due to unevaporated residual solvent. Based on this phenomenon, we classified and analyzed different film profiles according to the deposition method, the presence or absence of annealing, and the annealing temperature.
通过对旋涂和喷墨打印量子点发光二极管（QLED）性能分析结果的比较表明，通过后处理优化用于强脉冲光（IPL）的氧化锌纳米颗粒（ZnO NP）电子传输层（ETL）的退火温度因所使用的成膜方法而异。对于未经退火配制的自然干燥的ZnO NP ETL，根据旋涂和喷墨打印的成膜方法观察到不同的膜形态，并且由于未蒸发的残留溶剂，在IPL后处理中表面粗糙度均方根（RMS）值增加。基于这种现象，我们根据沉积方法、退火的有无以及退火温度对不同的膜轮廓进行了分类和分析。
