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一种柔性等离子体膜增强宽带锡基钙钛矿光电探测器。

A Flexible Plasmonic-Membrane-Enhanced Broadband Tin-Based Perovskite Photodetector.

作者信息

Ma Xue, Xu Yunkun, Li Siqi, Lo Tsz Wing, Zhang Baolin, Rogach Andrey L, Lei Dangyuan

机构信息

Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong S.A.R. 999077, People's Republic of China.

State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, People's Republic of China.

出版信息

Nano Lett. 2021 Nov 10;21(21):9195-9202. doi: 10.1021/acs.nanolett.1c03050. Epub 2021 Oct 21.

Abstract

Lead-free perovskite quantum dots (QDs) have been widely investigated for optoelectronic devices because of their excellent electrical and optical properties. However, optoelectronic devices based on such lead-free perovskites still have much lower performance than those made of Pb-based counterparts. Herein, we developed a lead-free photodetector with an enhanced broadband spectral response ranging from 300 to 630 nm. By balancing plasmonic near-field enhancement and surface energy quenching through precisely controlling the thickness of AlO spacer between the CsSnBr QDs and silver nanoparticle membrane, the photodetector with 5 nm thick AlO experiences a maximum photocurrent enhancement of 6.5-fold at 410 nm, with a responsivity of 62.3 mA/W and detectivity of 4.27 × 10 Jones. Moreover, its photocurrent shows a negligible decrease after 100 cycles of bending, which is ascribed to the tension-offset induced by the self-assembled nanoparticle membrane. The proposed plasmonic membrane enhancement provides a great potential for high-performance perovskite optoelectronic devices.

摘要

无铅钙钛矿量子点(QDs)因其优异的电学和光学性能而被广泛用于光电器件的研究。然而,基于此类无铅钙钛矿的光电器件的性能仍远低于基于铅基钙钛矿的光电器件。在此,我们开发了一种无铅光电探测器,其宽带光谱响应在300至630nm范围内得到增强。通过精确控制CsSnBr量子点与银纳米颗粒膜之间AlO间隔层的厚度,平衡等离子体近场增强和表面能量猝灭,厚度为5nm的AlO光电探测器在410nm处的最大光电流增强了6.5倍,响应度为62.3mA/W,探测率为4.27×10琼斯。此外,在100次弯曲循环后,其光电流的下降可忽略不计,这归因于自组装纳米颗粒膜引起的张力抵消。所提出的等离子体膜增强为高性能钙钛矿光电器件提供了巨大潜力。

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