Shao Guoqing, Wang Juan, Zhang Shumiao, Wang Yanfeng, Wang Wei, Wang Hong-Xing
Key Laboratory of Physical Electronics and Devices, Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China.
Materials (Basel). 2021 Oct 11;14(20):5964. doi: 10.3390/ma14205964.
Homoepitaxial growth of step-flow single crystal diamond was performed by microwave plasma chemical vapor deposition system on high-pressure high-temperature diamond substrate. A coarse surface morphology with isolated particles was firstly deposited on diamond substrate as an interlayer under hillock growth model. Then, the growth model was changed to step-flow growth model for growing step-flow single crystal diamond layer on this hillock interlayer. Furthermore, the surface morphology evolution, cross-section and surface microstructure, and crystal quality of grown diamond were evaluated by scanning electron microscopy, high-resolution transmission electron microcopy, and Raman and photoluminescence spectroscopy. It was found that the surface morphology varied with deposition time under step-flow growth parameters. The cross-section topography exhibited obvious inhomogeneity in crystal structure. Additionally, the diamond growth mechanism from the microscopic point of view was revealed to illustrate the morphological and structural evolution.
利用微波等离子体化学气相沉积系统在高温高压金刚石衬底上进行了台阶流单晶金刚石的同质外延生长。首先，在小丘生长模型下，在金刚石衬底上沉积了具有孤立颗粒的粗糙表面形态作为中间层。然后，将生长模型转变为台阶流生长模型，在该小丘中间层上生长台阶流单晶金刚石层。此外，通过扫描电子显微镜、高分辨率透射电子显微镜以及拉曼光谱和光致发光光谱对生长的金刚石的表面形态演变、横截面和表面微观结构以及晶体质量进行了评估。结果发现，在台阶流生长参数下，表面形态随沉积时间而变化。横截面形貌在晶体结构上表现出明显的不均匀性。此外，从微观角度揭示了金刚石的生长机制，以阐明其形态和结构演变。
