Universität Augsburg, Institut für Physik, D-86135 Augsburg, Germany.
Sci Rep. 2017 Mar 15;7:44462. doi: 10.1038/srep44462.
A detailed mechanism for heteroepitaxial diamond nucleation under ion bombardment in a microwave plasma enhanced chemical vapour deposition setup on the single crystal surface of iridium is presented. The novel mechanism of Ion Bombardment Induced Buried Lateral Growth (IBI-BLG) is based on the ion bombardment induced formation and lateral spread of epitaxial diamond within a ~1 nm thick carbon layer. Starting from one single primary nucleation event the buried epitaxial island can expand laterally over distances of several microns. During this epitaxial lateral growth typically thousands of isolated secondary nuclei are generated continuously. The unique process is so far only observed on iridium surfaces. It is shown that a diamond single crystal with a diameter of ~90 mm and a weight of 155 carat can be grown from such a carbon film which initially consisted of 2 · 10 individual grains.
提出了一种在微波等离子体增强化学气相沉积（MWPECVD）设备中，离子轰击单晶 Ir 表面异质外延金刚石成核的详细机制。基于离子轰击诱导形成和外延金刚石在约 1nm 厚的碳层内的侧向扩展，提出了一种新的成核机制，即离子轰击诱导埋层侧向生长（IBI-BLG）。从单个初始成核事件开始，埋层外延岛可以在几个微米的距离上侧向扩展。在此外延侧向生长过程中，通常会连续产生数千个孤立的次级核。到目前为止，这种独特的过程仅在 Ir 表面观察到。实验结果表明，从最初由 2·10^9 个晶粒组成的 2nm 厚的碳膜中，可以生长出直径约 90mm、重 155 克拉的金刚石单晶。
