Nguyen Tuan Dung, Jiang Jinbao, Song Bumsub, Tran Minh Dao, Choi Wooseon, Kim Ji Hee, Kim Young-Min, Duong Dinh Loc, Lee Young Hee
Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, 16419, Republic of Korea.
Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea.
Adv Sci (Weinh). 2021 Dec;8(24):e2102911. doi: 10.1002/advs.202102911. Epub 2021 Oct 28.
The confined defects in 2D van der Waals (vdW)-layered semiconductors can be easily tailored using charge doping, strain, or an electric field. Nevertheless, gate-tunable magnetic order via intrinsic defects has been rarely observed to date. Herein, a gate-tunable magnetic order via resonant Se vacancies in WSe is demonstrated. The Se-vacancy states are probed via photocurrent measurements with gating to convert unoccupied states to partially occupied states associated with photo-excited carrier recombination. The magneto-photoresistance hysteresis is modulated by gating, which is consistent with the density functional calculations. The two energy levels associated with Se vacancies split with increasing laser power, owing to the robust Coulomb interaction and strong spin-orbit coupling. The findings offer a new approach for controlling the magnetic properties of defects in optoelectronic and spintronic devices using vdW-layered semiconductors.
二维范德华（vdW）层状半导体中的受限缺陷可以通过电荷掺杂、应变或电场轻松定制。然而，迄今为止，很少观察到通过本征缺陷实现的栅极可调磁序。在此，展示了通过WSe中共振硒空位实现的栅极可调磁序。通过光电流测量探测硒空位态，通过栅控将未占据态转换为与光激发载流子复合相关的部分占据态。磁光电阻滞后通过栅控进行调制，这与密度泛函计算结果一致。由于强大的库仑相互作用和强自旋轨道耦合，与硒空位相关的两个能级随着激光功率的增加而分裂。这些发现为利用vdW层状半导体控制光电器件和自旋电子器件中缺陷的磁性提供了一种新方法。
