Zhu Wenxuan, Sun Jiacheng, Wang Yuyan, Li Yuankun, Bai Hua, Wang Qian, Han Lei, Zhang Qingtian, Wu Huaqiang, Song Cheng, Pan Feng
Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China.
Beijing National Research Center for Information Science and Technology, Tsinghua University, Beijing, 100084, P. R. China.
Adv Mater. 2024 Nov;36(47):e2403624. doi: 10.1002/adma.202403624. Epub 2024 Aug 11.
Interplay between magnetism and photoelectric properties introduces the effective control of photoresponse in optoelectronic devices via magnetic field, termed as magneto-photoresponse. It enriches the application scenarios and shows potential to construct in-sensor vision systems for artificial intelligence with gate-free architecture. However, achieving a simultaneous existence of room-temperature magnetism and notable photoelectric properties in semiconductors is a great challenge. Here, the room-temperature magneto-photoresponse is accomplished in all-2D optoelectronic devices, employing 2D ferromagnet FeGaTe as the source and drain, with WSe forming the channel. The interplay between room-temperature magnetism and photoelectric properties is realized by introducing the unique magneto-band structure effect from 2D interface, resulting in magneto-tunable charge transfer between FeGaTe and WSe. The photocurrent in this 2D optoelectronic device exhibits robust response to both the direction and amplitude of external magnetic fields. Utilizing constructed 2D optoelectronic devices with magneto-photoresponse, traditional gate-controlled phototransistors are replaced and a prototype in-sensor vision system with visual adaptation, significantly improving the recognition accuracy to over four times in low-contrast environments is established. These findings pave a way for achieving high-temperature magneto-photoresponse, thereby guiding the construction of robust in-sensor vision systems toward high performance and broad applications.
磁性与光电特性之间的相互作用使得通过磁场对光电器件中的光响应进行有效控制成为可能，这一现象被称为磁光响应。它丰富了应用场景，并显示出构建具有无栅极架构的人工智能传感器内视觉系统的潜力。然而，在半导体中同时实现室温磁性和显著的光电特性是一项巨大的挑战。在此，全二维光电器件实现了室温磁光响应，该器件采用二维铁磁体FeGaTe作为源极和漏极，以WSe形成沟道。通过引入二维界面独特的磁能带结构效应，实现了室温磁性与光电特性之间的相互作用，从而导致FeGaTe与WSe之间的磁可调电荷转移。这种二维光电器件中的光电流对外加磁场的方向和幅度都表现出强烈的响应。利用构建的具有磁光响应的二维光电器件，取代了传统的栅极控制光电晶体管，并建立了一个具有视觉适应性的传感器内视觉系统原型，在低对比度环境下将识别准确率显著提高到四倍以上。这些发现为实现高温磁光响应铺平了道路，从而指导构建高性能、广泛应用的强大传感器内视觉系统。
