Hötger Alexander, Klein Julian, Barthelmi Katja, Sigl Lukas, Sigger Florian, Männer Wolfgang, Gyger Samuel, Florian Matthias, Lorke Michael, Jahnke Frank, Taniguchi Takashi, Watanabe Kenji, Jöns Klaus D, Wurstbauer Ursula, Kastl Christoph, Müller Kai, Finley Jonathan J, Holleitner Alexander W
Walter Schottky Institute and Physics Department, TU Munich, 85748 Garching, Germany.
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
Nano Lett. 2021 Jan 27;21(2):1040-1046. doi: 10.1021/acs.nanolett.0c04222. Epub 2021 Jan 12.
We demonstrate electrostatic switching of individual, site-selectively generated matrices of single photon emitters (SPEs) in MoS van der Waals heterodevices. We contact monolayers of MoS in field-effect devices with graphene gates and hexagonal boron nitride as the dielectric and graphite as bottom gates. After the assembly of such gate-tunable heterodevices, we demonstrate how arrays of defects, that serve as quantum emitters, can be site-selectively generated in the monolayer MoS by focused helium ion irradiation. The SPEs are sensitive to the charge carrier concentration in the MoS and switch on and off similar to the neutral exciton in MoS for moderate electron doping. The demonstrated scheme is a first step for producing scalable, gate-addressable, and gate-switchable arrays of quantum light emitters in MoS heterostacks.
我们展示了在二硫化钼范德华异质结器件中，单个、通过位点选择性生成的单光子发射器（SPE）矩阵的静电切换。我们在具有石墨烯栅极、以六方氮化硼为电介质且以石墨为底部栅极的场效应器件中接触二硫化钼单层。在组装这种栅极可调异质器件之后，我们展示了如何通过聚焦氦离子辐照在位点选择性地在单层二硫化钼中生成用作量子发射器的缺陷阵列。这些单光子发射器对二硫化钼中的载流子浓度敏感，并且在适度电子掺杂时，其开启和关闭类似于二硫化钼中的中性激子。所展示的方案是在二硫化钼异质叠层中生产可扩展、栅极可寻址且栅极可切换的量子发光体阵列的第一步。
