Li Yao, Liu Qingshi, Liu Xiaojuan, Feng Jing, He Lingjun, Li Huwei, Li Chengyu, Zhang Hongjie
State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, 5625 Renmin Street, Changchun 130022, China.
University of Science and Technology of China, Hefei 230026, China.
J Phys Chem Lett. 2021 Nov 11;12(44):10746-10752. doi: 10.1021/acs.jpclett.1c03057. Epub 2021 Oct 29.
The application of CsPbCl perovskite is limited by the low photoluminescence quantum yield (PLQY), weak luminescence, and unpromising stability. Doping impurity ions has been considered as an effective strategy to tune the optoelectronic performances of perovskite. In this work, heterovalent Ti ions are successfully doped into CsPbCl nanocrystals. It is found that Ti ion doping could effectively improve the photoluminescence (PL) performance of CsPbCl nanocrystals. Density functional theory (DFT) calculations reveal that Ti ions could introduce more band-edge states around the conduction band minimum of CsPbCl, which is conducive to release electrons into conduction band. Furthermore, Ti ion doping could inhibit the Cl vacancy concentration in CsPbCl and prevent the in-gap state caused by Cl vacancy. Notably, the stability of CsPbCl perovskite is greatly improved through Ti ion doping. This work provides a new perspective for improving the optoelectronic properties of all-inorganic perovskites through heterovalent metal ion doping.
CsPbCl 钙钛矿的应用受到低光致发光量子产率(PLQY)、弱发光和稳定性不佳的限制。掺杂杂质离子被认为是调节钙钛矿光电性能的有效策略。在这项工作中,异价 Ti 离子成功掺杂到 CsPbCl 纳米晶体中。发现 Ti 离子掺杂可以有效提高 CsPbCl 纳米晶体的光致发光(PL)性能。密度泛函理论(DFT)计算表明,Ti 离子可以在 CsPbCl 的导带最小值附近引入更多的带边态,这有利于将电子释放到导带中。此外,Ti 离子掺杂可以抑制 CsPbCl 中的 Cl 空位浓度,并防止由 Cl 空位引起的带隙态。值得注意的是,通过 Ti 离子掺杂,CsPbCl 钙钛矿的稳定性得到了极大提高。这项工作为通过异价金属离子掺杂改善全无机钙钛矿的光电性能提供了新的视角。