Large valley polarization in a novel two-dimensional semiconductor H-ZrX(XCl, Br, I).

Inspired by the new progress in the research field of two-dimensional valleytronics materials, we propose a new class of transition metal halides, i.e. H-ZrX(X = Cl, Br, I), and investigated their valleytronics properties under the first-principles calculations. It harbors the spin-valley coupling at K and K' points in the top of valence band, in which the valley spin splitting of ZrIcan reach up to 115 meV. By carrying out the strain engineering, the valley spin splitting and Berry curvature can be effectively tuned. The long-sought valley polarization reaches up to 108 meV by doping Cr atom, which corresponds to the large Zeeman magnetic field of 778 T. Furthermore, the valley polarization in ZrXcan be lineally adjusted or flipped by manipulating the magnetization orientation of the doped magnetic atoms. All the results demonstrate the well-founded application prospects of single-layer ZrX, which can be considered as great candidate for the development of valleytronics and spintronics.