Bru Luis A, Pastor Daniel, Muñoz Pascual
Opt Express. 2021 Oct 25;29(22):36503-36515. doi: 10.1364/OE.435683.
Adaptable and complex optical characterization of photonic integrated devices, permitting to unearth possible design and fabrication errors in the different workflow steps are highly desired in the community. Here, we propose a technique capable of resolving full optical amplitude and phase response, in both frequency and time domains, of a photonic integrated device. It relies on optical frequency domain interferometry and makes use of a novel integrated architecture; a 3-way interferometer enabling single input and single output detection. We derive the test structure design rules and provide extensive experimental validation in silicon nitride and silicon on insulator technologies, by testing relevant devices such as arrayed waveguide grating, Mach-Zehnder interferometers, and ring resonators. Horizontal and vertical chip coupling, different external setup arrangements, and the optical dispersion de-embedding inherent to the technique are demonstrated. Finally, we discuss why this characterization approach might lay the groundwork of a standard testing tool for photonic integrated devices.
光子集成器件的适应性和复杂光学特性表征,能够揭示不同工作流程步骤中可能存在的设计和制造错误,这是该领域非常需要的。在此,我们提出一种能够解析光子集成器件在频域和时域的全光幅度和相位响应的技术。它依赖于光学频域干涉测量法,并利用一种新颖的集成架构;一种实现单输入和单输出检测的三路干涉仪。我们推导了测试结构的设计规则,并通过测试诸如阵列波导光栅、马赫-曾德尔干涉仪和环形谐振器等相关器件,在氮化硅和绝缘体上硅技术中提供了广泛的实验验证。展示了水平和垂直芯片耦合、不同的外部设置安排以及该技术固有的光学色散去嵌入。最后,我们讨论了为什么这种表征方法可能为光子集成器件的标准测试工具奠定基础。