在抛光铜箔（111）上无缝拼接石墨烯畴。
Seamless stitching of graphene domains on polished copper (111) foil.
机构信息
IBS Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Sungkyunkwan University, Suwon, 440-746, Republic of Korea; Department of Energy Science, Department of Physics, Sungkyunkwan University, Suwon, 440-746, Republic of Korea.
出版信息
Adv Mater. 2015 Feb 25;27(8):1376-82. doi: 10.1002/adma.201404541. Epub 2014 Dec 18.
Seamless stitching of graphene domains on polished copper (111) is proved clearly not only at atomic scale by scanning tunnelling microscopy (STM) and transmission electron micoscopy (TEM), but also at the macroscale by optical microscopy after UV-treatment. Using this concept of seamless stitching, synthesis of 6 cm × 3 cm monocrystalline graphene without grain boundaries on polished copper (111) foil is possible, which is only limited by the chamber size.
经原子力显微镜（STM）和透射电子显微镜（TEM）证实，在原子尺度上，铜（111）经抛光处理后，其表面的石墨烯畴可以实现无缝拼接；经紫外光处理后，在光学显微镜下也可以清晰地看到这一现象。利用这一无缝拼接的概念，我们可以在铜（111）箔上合成出尺寸为 6cm×3cm 的单晶石墨烯，而且没有晶界，前提是生长室的大小允许。由于生长室大小的限制，目前我们仅能得到尺寸为 6cm×3cm 的单晶石墨烯。
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