Kang Kaijin, Hu Wei, Tang Xiaosheng
Key Laboratory of Optoelectronic Technology and System of Ministry of Education, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China.
School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, China.
J Phys Chem Lett. 2021 Dec 9;12(48):11673-11682. doi: 10.1021/acs.jpclett.1c03408. Epub 2021 Nov 29.
Resistive switching random access memory (RRAM), also known as memristor, is regarded as an emerging nonvolatile memory and computing-in-memory technology to address the intrinsic physical limitations of conventional memory and the bottleneck of von Neumann architecture. In particular, halide perovskite RRAMs have attracted widespread attention in recent years because of their ionic migration nature and excellent photoelectric properties. This Perspective first provides a condensed overview of halide perovskite RRAMs based on materials, device performance, switching mechanism, and potential applications. Moreover, this Perspective attempts to detail the challenges, such as the quality of halide perovskite films, the compatible processing of device fabrication, the reliability of memory performance, and clarification of the switching mechanism, and further discusses how the outstanding challenges of halide perovskite RRAMs could be met in future research.
电阻式开关随机存取存储器（RRAM），也被称为忆阻器，被视为一种新兴的非易失性存储器和内存计算技术，旨在解决传统存储器的固有物理限制以及冯·诺依曼架构的瓶颈问题。特别是，卤化物钙钛矿RRAM近年来因其离子迁移特性和优异的光电性能而受到广泛关注。本观点文章首先基于材料、器件性能、开关机制和潜在应用对卤化物钙钛矿RRAM进行了简要概述。此外，本观点文章试图详细阐述一些挑战，如卤化物钙钛矿薄膜的质量、器件制造的兼容工艺、存储性能的可靠性以及开关机制的阐明，并进一步探讨在未来研究中如何应对卤化物钙钛矿RRAM的突出挑战。
