Gogoi Himangshu Jyoti, Bajpai Kunal, Mallajosyula Arun Tej, Solanki Ankur
Department of Electrical Engineering, Indian Institute of Technology Guwahati, Guwahati 781039, India.
Department of Physics, School of Technology, Pandit Deendayal Energy University, Gandhinagar 382421, India.
J Phys Chem Lett. 2021 Sep 16;12(36):8798-8825. doi: 10.1021/acs.jpclett.1c02105. Epub 2021 Sep 7.
Hybrid organic-inorganic metal halide perovskite (HOIP)-based memristors have captured strong attention not only as an emerging candidate for next-generation high-density information storage technology but also for use in healthcare technology and the Internet of Things (IoT) because of their unique properties: low weight, flexibility, compatibility, stretchability, and low power consumption. In this Perspective, we review the recent advances of various aspects of flexible memristors focusing on the selection of the flexible substrates, materials, interfaces, several resistive switching mechanisms, and different methodologies of perovskite growth. The current state of the art of the memristor as an artificial synapse, light-induced resistive switching, and logic gates is comprehensively and systematically reviewed. Finally, we briefly discuss the stability factors of perovskites and present the conclusion with a broad outlook on the progress and challenges in the field of perovskite-based flexible memristors.
基于有机-无机杂化金属卤化物钙钛矿(HOIP)的忆阻器不仅作为下一代高密度信息存储技术的新兴候选者,而且因其独特的特性:重量轻、柔韧性、兼容性、可拉伸性和低功耗,而在医疗技术和物联网(IoT)中得到了广泛关注。在这篇综述中,我们回顾了柔性忆阻器各个方面的最新进展,重点关注柔性衬底、材料、界面的选择,几种电阻开关机制以及钙钛矿生长的不同方法。对忆阻器作为人工突触、光致电阻开关和逻辑门的当前技术水平进行了全面系统的综述。最后,我们简要讨论了钙钛矿的稳定性因素,并对基于钙钛矿的柔性忆阻器领域的进展和挑战进行了展望并得出结论。