Fang Yuetong, Zhai Shuaibo, Chu Liang, Zhong Jiasong
New Energy Technology Engineering Laboratory of Jiangsu Province & College of Telecommunications and Information Engineering & College of Electronic and Optic Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China.
Guangdong Provincial Key Lab of Nano-Micro Materials Research, School of Chemical Biology and Biotechnology, Peking University Shenzhen Graduate School, Shenzhen 518055, People's Republic of China.
ACS Appl Mater Interfaces. 2021 Apr 21;13(15):17141-17157. doi: 10.1021/acsami.1c03433. Epub 2021 Apr 12.
Memristors have attracted considerable attention as one of the four basic circuit elements besides resistors, capacitors, and inductors. Especially, the nonvolatile memory devices have become a promising candidate for the new-generation information storage, due to their excellent write, read, and erase rates, in addition to the low-energy consumption, multistate storage, and high scalability. Among them, halide perovskite (HP) memristors have great potential to achieve low-cost practical information storage and computing. However, the usual lead-based HP memristors face serious problems of high toxicity and low stability. To alleviate the above issues, great effort has been devoted to develop lead-free HP memristors. Here, we have summarized and discussed the advances in HP memristors from lead-based to lead-free materials including memristive properties, stability, neural network applications, and memristive mechanism. Finally, the challenges and prospects of lead-free HP memristors have been discussed.
忆阻器作为除电阻器、电容器和电感器之外的四种基本电路元件之一，已引起了广泛关注。特别是，非易失性存储器件因其优异的写入、读取和擦除速率，以及低能耗、多态存储和高可扩展性，已成为新一代信息存储的有前途的候选者。其中，卤化物钙钛矿（HP）忆阻器在实现低成本实用信息存储和计算方面具有巨大潜力。然而，常见的基于铅的HP忆阻器面临着高毒性和低稳定性等严重问题。为了缓解上述问题，人们已付出巨大努力来开发无铅HP忆阻器。在此，我们总结并讨论了从基于铅的材料到无铅材料的HP忆阻器的进展，包括忆阻特性、稳定性、神经网络应用和忆阻机制。最后，讨论了无铅HP忆阻器的挑战和前景。
