Cowie Megan, Plougmann Rikke, Benkirane Yacine, Schué Léonard, Schumacher Zeno, Grütter Peter
Department of Physics, McGill University, 3600 Rue University, Montréal, Québec H3A 2T8, Canada.
Département de Chimie and Regroupement Québécois sur les Matériaux de Pointe (RQMP), Université de Montréal, C.P. 6128, Succursale Centre-Ville, Montréal, Québec H3C 3J7, Canada.
Nanotechnology. 2021 Dec 28;33(12). doi: 10.1088/1361-6528/ac40bd.
Transition metal dichalcogenides (TMDCs) have attracted significant attention for optoelectronic, photovoltaic and photoelectrochemical applications. The properties of TMDCs are highly dependent on the number of stacked atomic layers, which is usually counted post-fabrication, using a combination of optical methods and atomic force microscopy height measurements. Here, we use photoluminescence spectroscopy, Raman spectroscopy, and three different AFM methods to demonstrate significant discrepancies in height measurements of exfoliated MoSeflakes on SiOdepending on the method used. We also highlight the often overlooked effect that electrostatic forces can be misleading when measuring the height of a MoSeflake using AFM.
过渡金属二硫属化物（TMDCs）在光电子、光伏和光电化学应用方面引起了广泛关注。TMDCs的性质高度依赖于堆叠的原子层数，而原子层数通常是在制备后通过光学方法和原子力显微镜高度测量相结合的方式来计算的。在这里，我们使用光致发光光谱、拉曼光谱和三种不同的原子力显微镜方法来证明，根据所使用的方法不同，在测量SiO上剥离的MoSe薄片的高度时会存在显著差异。我们还强调了一个经常被忽视的效应，即在使用原子力显微镜测量MoSe薄片的高度时，静电力可能会产生误导。
