Ludwiczak Katarzyna, Da Browska Aleksandra Krystyna, Kucharek Julia, Rogoża Jakub, Tokarczyk Mateusz, Bożek Rafał, Gryglas-Borysiewicz Marta, Taniguchi Takashi, Watanabe Kenji, Binder Johannes, Pacuski Wojciech, Wysmołek Andrzej
Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland.
Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
ACS Appl Mater Interfaces. 2024 Sep 18;16(37):49701-49710. doi: 10.1021/acsami.4c12559. Epub 2024 Sep 6.
Van der Waals heterostructures open up vast possibilities for applications in optoelectronics, especially since it was recognized that the optical properties of transition-metal dichalcogenides (TMDC) can be enhanced by adjacent hBN layers. However, although many micrometer-sized structures have been fabricated, the bottleneck for applications remains the lack of large-area structures with electrically tunable photoluminescence emission. In this study, we demonstrate the electrical charge carrier tuning for large-area epitaxial MoSe grown directly on epitaxial hBN. The structure is produced in a multistep procedure involving Metalorganic Vapor Phase Epitaxy (MOVPE) growth of large-area hBN, a wet transfer of hBN onto a SiO/Si substrate, and the subsequent Molecular Beam Epitaxy (MBE) growth of monolayer MoSe. The electrically induced change of the carrier concentration is deduced from the evolution of well-resolved charged and neutral exciton intensities. Our findings show that it is feasible to grow large-area, electrically addressable, high-optical-quality van der Waals heterostructures.
范德华异质结构为光电子学应用开辟了广阔的可能性，特别是自从人们认识到过渡金属二硫属化物（TMDC）的光学性质可以通过相邻的hBN层得到增强以来。然而，尽管已经制造出了许多微米级的结构，但应用的瓶颈仍然是缺乏具有电可调光致发光发射的大面积结构。在本研究中，我们展示了直接在外延hBN上生长的大面积外延MoSe的电荷载流子调谐。该结构通过多步工艺制备，包括大面积hBN的金属有机气相外延（MOVPE）生长、hBN到SiO/Si衬底上的湿法转移以及随后单层MoSe的分子束外延（MBE）生长。从分辨良好的带电和中性激子强度的演变中推导出载流子浓度的电致变化。我们的研究结果表明，生长大面积、电可寻址、高光质量的范德华异质结构是可行的。
