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用于高性能发光器件的带隙工程化高效蓝光和绿光发射CdZnSeS/ZnS四元合金核壳胶体纳米片

Bandgap-Engineered High-Efficiency Blue- and Green-Emitting CdZnSeS/ZnS Quaternary Alloyed Core/Shell Colloidal Nanoplatelets for High-Performance Light-Emitting Devices.

作者信息

Khaligh Aisan, Delikanli Savas, Canimkurbey Betul, Shabani Farzan, Isik Furkan, Demir Hilmi Volkan

机构信息

UNAM-Institute of Materials Science and Nanotechnology and the National Nanotechnology Research Center, Department of Electrical and Electronics Engineering, Department of Physics, Bilkent University, Ankara 06800, Turkey.

LUMINOUS! Centre of Excellence for Semiconductor Lighting and Displays, The Photonics Institute, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore.

出版信息

ACS Appl Mater Interfaces. 2025 Jun 11;17(23):34206-34218. doi: 10.1021/acsami.5c04630. Epub 2025 Jun 2.

Abstract

Developing solution-processed blue emitters with high stability and photoluminescence quantum yield (PL-QY) is strongly desired for advanced optoelectronic devices. However, achieving high-efficiency blue emitters has been challenging, as the growth of shell layers required for passivation of nonradiative recombination pathways induces a considerable red shift toward longer wavelengths in colloidal nanocrystals. To address this limitation, in this work, we propose and demonstrate a meticulous synthetic approach to develop highly efficient CdZnSeS/ZnS quaternary alloyed core/shell nanoplatelets (NPLs) with controllable shell thickness and core composition, exhibiting blue or green emission, depending on the core composition. Starting with the CdSeS alloyed core NPLs, a thin ZnS shell was first grown through the hot injection (HI) technique, followed by a Cd-to-Zn cation-exchange (CE) reaction, which blue-shifts the absorption/emission peaks. Then, a wide-gap ZnS shell was grown a second time to passivate the surface and obtain high-efficiency thick NPLs with a PL-QY of >70% over a broad spectrum (ca. 460-560 nm). Despite the increased thickness, the thick-shell quaternary NPLs exhibit a minimal PL red shift. The blue light-emitting diode (LED) device fabricated using these bandgap-engineered NPLs demonstrates an exceptionally high external quantum efficiency (EQE) of 11.3% at 482 nm with a low turn-on voltage () of less than 2.5 V, and a maximum luminance () of 12,451 cd/m. These advanced heterostructures of NPLs with highly efficient tunable emission in blue and green provide a great platform for developing high-performance light-emitting devices, especially for LEDs and lasers.

摘要

对于先进的光电器件而言,迫切需要开发具有高稳定性和光致发光量子产率(PL-QY)的溶液法制备的蓝色发光体。然而,实现高效蓝色发光体一直具有挑战性,因为钝化非辐射复合路径所需的壳层生长会导致胶体纳米晶体中的发射峰向更长波长发生显著红移。为了解决这一限制,在本工作中,我们提出并展示了一种精心设计的合成方法,以制备具有可控壳层厚度和核组成的高效CdZnSeS/ZnS四元合金核/壳纳米片(NPL),根据核组成的不同,其可呈现蓝色或绿色发射。从CdSeS合金核NPL开始,首先通过热注入(HI)技术生长一层薄的ZnS壳,然后进行Cd到Zn的阳离子交换(CE)反应,这会使吸收/发射峰发生蓝移。接着,再次生长一层宽带隙ZnS壳以钝化表面,并获得在宽光谱(约460 - 560 nm)上PL-QY大于70%的高效厚NPL。尽管厚度增加,但厚壳四元NPL的PL红移最小。使用这些经过带隙工程设计的NPL制造的蓝光发光二极管(LED)器件在482 nm处表现出异常高的11.3%的外量子效率(EQE),开启电压()低于2.5 V,最大亮度()为12,451 cd/m。这些具有高效可调谐蓝色和绿色发射的先进NPL异质结构为开发高性能发光器件,特别是LED和激光器,提供了一个很好的平台。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7df3/12163922/d627403485df/am5c04630_0001.jpg

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