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通过 II 型纳米板层的先进异质结构实现高光外量子效率发光二极管。

High External Quantum Efficiency Light-Emitting Diodes Enabled by Advanced Heterostructures of Type-II Nanoplatelets.

机构信息

LUMINOUS! Centre of Excellence for Semiconductor Lighting and Displays, The Photonics Institute, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798.

State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China.

出版信息

ACS Nano. 2023 Apr 25;17(8):7636-7644. doi: 10.1021/acsnano.3c00046. Epub 2023 Mar 13.

Abstract

Colloidal quantum wells (CQWs), also known as nanoplatelets (NPLs), are exciting material systems for numerous photonic applications, including lasers and light-emitting diodes (LEDs). Although many successful type-I NPL-LEDs with high device performance have been demonstrated, type-II NPLs are not fully exploited for LED applications, even with alloyed type-II NPLs with enhanced optical properties. Here, we present the development of CdSe/CdTe/CdSe core/crown/crown (multi-crowned) type-II NPLs and systematic investigation of their optical properties, including their comparison with the traditional core/crown counterparts. Unlike traditional type-II NPLs such as CdSe/CdTe, CdTe/CdSe, and CdSe/CdSeTe core/crown heterostructures, here the proposed advanced heterostructure reaps the benefits of having two type-II transition channels, resulting in a high quantum yield (QY) of 83% and a long fluorescence lifetime of 73.3 ns. These type-II transitions were confirmed experimentally by optical measurements and theoretically using electron and hole wave function modeling. Computational study shows that the multi-crowned NPLs provide a better-distributed hole wave function along the CdTe crown, while the electron wave function is delocalized in the CdSe core and CdSe crown layers. As a proof-of-concept demonstration, NPL-LEDs based on these multi-crowned NPLs were designed and fabricated with a record high external quantum efficiency (EQE) of 7.83% among type-II NPL-LEDs. These findings are expected to induce advanced designs of NPL heterostructures to reach a fascinating level of performance, especially in LEDs and lasers.

摘要

胶体量子阱(CQW),也称为纳米板(NPL),是许多光子应用的令人兴奋的材料系统,包括激光和发光二极管(LED)。尽管已经展示了许多具有高性能器件的成功的 I 型 NPL-LED,但 II 型 NPL 并未充分用于 LED 应用,即使使用具有增强光学性能的合金 II 型 NPL 也是如此。在这里,我们提出了 CdSe/CdTe/CdSe 核/冠/冠(多冠)型 II 型 NPL 的开发,并对其光学性质进行了系统研究,包括与传统核/冠对应物的比较。与传统的 II 型 NPL 如 CdSe/CdTe、CdTe/CdSe 和 CdSe/CdSeTe 核/冠异质结构不同,这里提出的先进异质结构得益于具有两个 II 型跃迁通道,从而实现了 83%的高量子产率(QY)和 73.3 ns 的长荧光寿命。这些 II 型跃迁通过光学测量和使用电子和空穴波函数建模的理论实验得到了证实。计算研究表明,多冠 NPL 提供了沿 CdTe 冠更好分布的空穴波函数,而电子波函数在 CdSe 核和 CdSe 冠层中离域。作为概念验证演示,基于这些多冠 NPL 设计并制造了 NPL-LED,其外部量子效率(EQE)达到了 7.83%,创下了 II 型 NPL-LED 的记录。这些发现有望引发 NPL 异质结构的先进设计,以达到令人着迷的性能水平,特别是在 LED 和激光中。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7276/10134493/6850a11ef24e/nn3c00046_0001.jpg

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