Zhao Shuai, Xiao Li
School of Science, Chongqing University of Technology, Chongqing 400054, P. R. China.
Chongqing Key Laboratory of Green Energy Materials Technology and Systems, Chongqing 400054, P. R. China.
Phys Chem Chem Phys. 2021 Dec 22;24(1):403-410. doi: 10.1039/d1cp03631a.
Ion migration under light illumination or electric field could cause several complex phenomena, such as hysteresis, phase segregation, and interface passivation, in optoelectronic devices based on hybrid organic-inorganic perovskites. The high ionic conductivity of metal halide perovskites can be ascribed to the lower migration barrier of halide anions, which has been demonstrated to be inhibited by the large organic layer of two-dimensional perovskite structures. However, in all-inorganic two-dimensional perovskites, the diffusion mechanism of halide anions has not been comprehensively studied. Herein, we investigate the diffusion mechanism of halide anions in all-inorganic Ruddlesden-Popper (RP) halide perovskites by first-principles calculations. In these all-inorganic perovskites, the inorganic CsI layer can also prevent halide diffusion between the adjacent octahedral slabs the vacancy-hopping mechanism. However, intercalation provides an additional diffusion channel for halide interstitials, which promote in-plane diffusion in RP perovskites. These results reveal the migration properties of halide vacancies and interstitials in all-inorganic RP perovskites, which would be beneficial for exploring their novel optoelectronic applications.
在基于有机-无机杂化钙钛矿的光电器件中,光照或电场作用下的离子迁移会引发诸如滞后、相分离和界面钝化等多种复杂现象。金属卤化物钙钛矿的高离子电导率可归因于卤化物阴离子较低的迁移势垒,二维钙钛矿结构中的大有机层已证明可抑制这种迁移势垒。然而,在全无机二维钙钛矿中,卤化物阴离子的扩散机制尚未得到全面研究。在此,我们通过第一性原理计算研究了全无机Ruddlesden-Popper(RP)卤化物钙钛矿中卤化物阴离子的扩散机制。在这些全无机钙钛矿中,无机CsI层也可通过空位跳跃机制防止卤化物在相邻八面体片层之间扩散。然而,插层为卤化物间隙原子提供了额外的扩散通道,促进了RP钙钛矿中的面内扩散。这些结果揭示了全无机RP钙钛矿中卤化物空位和间隙原子的迁移特性,这将有助于探索其新型光电器件应用。