Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA.
Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA.
Adv Mater. 2019 Jan;31(1):e1803514. doi: 10.1002/adma.201803514. Epub 2018 Oct 10.
Following the rejuvenation of 3D organic-inorganic hybrid perovskites, like CH NH PbI , (quasi)-2D Ruddlesden-Popper soft halide perovskites R A Pb X have recently become another focus in the optoelectronic and photovoltaic device community. Although quasi-2D perovskites were first introduced to stabilize optoelectronic/photovoltaic devices against moisture, more interesting properties and device applications, such as solar cells, light-emitting diodes, white-light emitters, lasers, and polaritonic emission, have followed. While delicate engineering design has pushed the performance of various devices forward remarkably, understanding of the fundamental properties, especially the charge-transfer process, electron-phonon interactions, and the growth mechanism in (quasi)-2D halide perovskites, remains limited and even controversial. Here, after reviewing the current understanding and the nexus between optoelectronic/photovoltaic properties of 2D and 3D halide perovskites, the growth mechanisms, charge-transfer processes, vibrational properties, and electron-phonon interactions of soft halide perovskites, mainly in quasi-2D systems, are discussed. It is suggested that single-crystal-based studies are needed to deepen the understanding of the aforementioned fundamental properties, and will eventually contribute to device performance.
继 3D 有机-无机杂化钙钛矿(如 CH3NH3PbI3)复兴之后,(准)2D 类 Ruddlesden-Popper 型软卤化物钙钛矿 R2n+1PbnX3n+1(n=1-3)最近成为光电和光伏器件领域的另一个焦点。虽然准 2D 钙钛矿最初被引入是为了稳定光电/光伏器件免受潮气的影响,但更有趣的性质和器件应用,如太阳能电池、发光二极管、白光发射器、激光器和极化激元发射,也随之而来。虽然精细的工程设计显著推动了各种器件的性能向前发展,但对基本性质的理解,特别是在(准)2D 卤化物钙钛矿中的电荷转移过程、电子-声子相互作用和生长机制,仍然有限,甚至存在争议。在这里,在回顾了 2D 和 3D 卤化物钙钛矿的光电/光伏性质的当前理解以及它们之间的联系之后,讨论了软卤化物钙钛矿(主要是在准 2D 体系中)的生长机制、电荷转移过程、振动性质和电子-声子相互作用。有人建议,需要进行基于单晶的研究来深化对上述基本性质的理解,并最终有助于提高器件性能。