Wang Yake, Chen Jinping, Zeng Yi, Yu Tianjun, Guo Xudong, Wang Shuangqing, Allenet Timothée, Vockenhuber Michaela, Ekinci Yasin, Zhao Jun, Yang Shumin, Wu Yanqing, Yang Guoqiang, Li Yi
Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China.
University of Chinese Academy of Sciences, Beijing 100049, China.
ACS Omega. 2022 Aug 12;7(33):29266-29273. doi: 10.1021/acsomega.2c03445. eCollection 2022 Aug 23.
A series of -butyloxycarbonyl (-Boc) protected tetraphenylsilane derivatives (TPSi-Boc , = 60, 70, 85, 100%) were synthesized and used as resist materials to investigate the effect of -Boc protecting ratio on advanced lithography. The physical properties such as solubility, film-forming ability, and thermal stability of TPSi-Boc were examined to assess the suitability for application as candidates for positive-tone molecular glass resist materials. The effects of -Boc protecting ratio had been studied in detail by electron beam lithography. The results suggest that the TPSi-Boc resist with different -Boc protecting ratios exhibit a significant change in contrast, pattern blur, and the density of bridge defect. The TPSi-Boc resist achieves the most excellent patterning capability. The extreme ultraviolet (EUV) lithography performance on TPSi-Boc was evaluated by using the soft X-ray interference lithography. The results demonstrate that the TPSi-Boc resist can achieve excellent patterning capability down to 20 nm isolated lines at 8.7 mJ/cm and 25 nm dense lines at 14.5 mJ/cm. This study will help us to understand the relationship between the -Boc protecting ratio and the patterning ability and supply useful guidelines for designing molecular resists.
合成了一系列叔丁氧羰基（-Boc）保护的四苯基硅烷衍生物（TPSi-Boc ，= 60、70、85、100%），并将其用作抗蚀剂材料，以研究-Boc保护比例对先进光刻技术的影响。对TPSi-Boc 的溶解性、成膜能力和热稳定性等物理性质进行了研究，以评估其作为正性分子玻璃抗蚀剂材料候选物的适用性。通过电子束光刻详细研究了-Boc保护比例的影响。结果表明，具有不同-Boc保护比例的TPSi-Boc 抗蚀剂在对比度、图案模糊和桥接缺陷密度方面表现出显著变化。TPSi-Boc抗蚀剂具有最优异的图案化能力。利用软X射线干涉光刻技术评估了TPSi-Boc上的极紫外（EUV）光刻性能。结果表明，TPSi-Boc抗蚀剂在8.7 mJ/cm² 时可实现低至20 nm孤立线条的优异图案化能力，在14.5 mJ/cm² 时可实现25 nm密集线条的优异图案化能力。本研究将有助于我们理解-Boc保护比例与图案化能力之间的关系，并为分子抗蚀剂的设计提供有用的指导。
