Chen Kuan-Ting, Qiu Yu-Yan, Tang Ming, Lee Chia-Feng, Dai Yi-Lu, Lee Min-Hung, Chang Shu-Tong
J Nanosci Nanotechnol. 2018 Oct 1;18(10):6873-6878. doi: 10.1166/jnn.2018.15725.
In this paper, we investigate the negative-capacitance fin field-effect (NC-FinFET) and extend the design beyond the 7-nm technology node. A 7-nm-node NC-FinFET is presented using the Landau-Khalatnikov equation and the physical equations of a 3D technology computer-aided design simulation. We propose a new NC-FinFET with double ferroelectric hafnium zircon dioxide layers. This device exhibits noticeable voltage gains in the sub-threshold region, can decrease subthreshold swing (SS) effectively, has a wide-ranged uniform SS lower than 60 mV/dec, and can downscale the threshold voltage without increasing the off current. The static noise margin of the static random access memory using the new NC-FinFET is simulated and shows good performance with improved SS and threshold voltage.
在本文中，我们研究了负电容鳍式场效应晶体管（NC-FinFET），并将其设计扩展到7纳米技术节点之外。利用朗道-哈拉特尼科夫方程和3D技术计算机辅助设计模拟的物理方程，展示了一款7纳米节点的NC-FinFET。我们提出了一种具有双铁电铪锆氧化物层的新型NC-FinFET。该器件在亚阈值区域表现出显著的电压增益，能有效降低亚阈值摆幅（SS），具有低于60 mV/dec的宽范围均匀SS，并且可以在不增加关态电流的情况下降低阈值电压。对使用新型NC-FinFET的静态随机存取存储器的静态噪声容限进行了模拟，结果表明其在改善的SS和阈值电压方面具有良好性能。
