Yao Yi-Ju, Yang Ching-Ru, Tseng Ting-Yu, Chang Heng-Jia, Lin Tsai-Jung, Luo Guang-Li, Hou Fu-Ju, Wu Yung-Chun, Chang-Liao Kuei-Shu
College of Semiconductor Research, National Tsing Hua University, Hsinchu 30013, Taiwan.
Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan.
Nanomaterials (Basel). 2023 Apr 8;13(8):1310. doi: 10.3390/nano13081310.
This research presents the optimization and proposal of P- and N-type 3-stacked SiGe/Si strained super-lattice FinFETs (SL FinFET) using Low-Pressure Chemical Vapor Deposition (LPCVD) epitaxy. Three device structures, Si FinFET, SiGe FinFET, and SiGe/Si SL FinFET, were comprehensively compared with HfO = 4 nm/TiN = 80 nm. The strained effect was analyzed using Raman spectrum and X-ray diffraction reciprocal space mapping (RSM). The results show that SiGe/Si SL FinFET exhibited the lowest average subthreshold slope (SS) of 88 mV/dec, the highest maximum transconductance (G) of 375.2 μS/μm, and the highest ON-OFF current ratio (I/I), approximately 10 at V = 0.5 V due to the strained effect. Furthermore, with the super-lattice FinFETs as complementary metal-oxide-semiconductor (CMOS) inverters, a maximum gain of 91 was achieved by varying the supply voltage from 0.6 V to 1.2 V. The simulation of a SiGe/Si super-lattice FinFET with the state of the art was also investigated. The proposed SiGe/Si strained SL FinFET is fully compatible with the CMOS technology platform, showing promising flexibility for extending CMOS scaling.
本研究介绍了采用低压化学气相沉积（LPCVD）外延技术对P型和N型三层SiGe/Si应变超晶格鳍式场效应晶体管（SL FinFET）进行的优化及方案。将三种器件结构，即硅鳍式场效应晶体管（Si FinFET）、硅锗鳍式场效应晶体管（SiGe FinFET）和SiGe/Si SL FinFET，与HfO = 4 nm/TiN = 80 nm进行了全面比较。利用拉曼光谱和X射线衍射倒易空间映射（RSM）分析了应变效应。结果表明，由于应变效应，SiGe/Si SL FinFET表现出最低的平均亚阈值斜率（SS），为88 mV/dec，最高的最大跨导（G），为375.2 μS/μm，以及最高的开/关电流比（I/I），在V = 0.5 V时约为10。此外，将超晶格鳍式场效应晶体管用作互补金属氧化物半导体（CMOS）反相器时，通过将电源电压从0.6 V变化到1.2 V，实现了91的最大增益。还研究了与现有技术水平的SiGe/Si超晶格鳍式场效应晶体管的模拟。所提出的SiGe/Si应变SL FinFET与CMOS技术平台完全兼容，显示出在扩展CMOS缩放方面具有良好的灵活性。
