Hui Yuen Yung, Ho Chen-Yu, Yang Teng-I, Huang Tzu-Ping, Cheng Bing-Ming, Lee Yin-Yu, Chang Huan-Cheng
Institute of Atomic and Molecular Sciences, Academia Sinica Taipei 106 Taiwan
Taiwan Instrument Research Institute, National Applied Research Laboratories Hsinchu City 300092 Taiwan.
RSC Adv. 2025 Jan 13;15(2):1011-1019. doi: 10.1039/d4ra08013k. eCollection 2025 Jan 9.
Extreme ultraviolet (EUV) lithography is a cutting-edge technology in contemporary semiconductor chip manufacturing. Monitoring the EUV beam profiles is critical to ensuring consistent quality and precision in the manufacturing process. This study uncovers the practical use of fluorescent nanodiamonds (FNDs) coated on optical image sensors for profiling EUV and soft X-ray (SXR) radiation beams. We employed a positive electrospray ion source to deposit 100 nm FNDs onto indium tin oxide (ITO)-coated substrates, forming 1 μm thick films. The scintillation films exhibited approximately 50% transparency in the visible region and could emit red fluorescence from neutral nitrogen-vacancy (NV) centers in the FNDs when exposed to EUV/SXR radiation. We evaluated the performance of a device featuring an FND coating on a fiber optic plate (FOP) attached to the sensor of a complementary metal-oxide semiconductor (CMOS) camera using synchrotron radiation across the 80-1400 eV energy range. At 91.8 eV (or a wavelength of 13.5 nm), the fiber-coupled device exhibited a noise-equivalent power density of 0.25 μW cm Hz, approximately eight times lower than that of an f/1.0 lens-coupled system. This enhanced sensitivity makes the FND/FOP-based detection system useful for beam profiling of various EUV/SXR radiation sources. Our results highlight the promising potential of electrosprayed FND scintillators as a cost-effective and versatile diagnostic tool for advancing next-generation photolithography.
极紫外(EUV)光刻是当代半导体芯片制造中的一项前沿技术。监测EUV光束轮廓对于确保制造过程中的质量和精度一致性至关重要。本研究揭示了涂覆在光学图像传感器上的荧光纳米金刚石(FND)在EUV和软X射线(SXR)辐射光束轮廓分析中的实际应用。我们使用正电喷雾离子源将100 nm的FND沉积到氧化铟锡(ITO)涂层基板上,形成1μm厚的薄膜。闪烁膜在可见光区域表现出约50%的透明度,并在暴露于EUV/SXR辐射时能从FND中的中性氮空位(NV)中心发出红色荧光。我们使用同步辐射在80 - 1400 eV能量范围内评估了一种在互补金属氧化物半导体(CMOS)相机传感器所连接的光纤板(FOP)上具有FND涂层的设备的性能。在91.8 eV(或波长为13.5 nm)时,光纤耦合设备的噪声等效功率密度为0.25 μW cm Hz,大约比f/1.0镜头耦合系统低八倍。这种增强的灵敏度使得基于FND/FOP的检测系统可用于各种EUV/SXR辐射源的光束轮廓分析。我们的结果突出了电喷雾FND闪烁体作为一种经济高效且通用的诊断工具在推动下一代光刻技术发展方面所具有的广阔潜力。