Wang Yangyang, Li Zhaoyang, Ma Zhibiao, Wang Lingxu, Guo Xiaodong, Liu Yan, Yao Bingdong, Zhang Fengqing, Zhu Luyi
School of Materials Science and Engineering, Shandong Jianzhu University, Jinan 250101, China.
State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan 250100, China.
Nanomaterials (Basel). 2021 Dec 30;12(1):108. doi: 10.3390/nano12010108.
BiSmFeMnO (x = 0, 0.02, 0.04, 0.06; named BSFMx) (BSFM) films were prepared by the sol-gel method on indium tin oxide (ITO)/glass substrate. The effects of different Sm content on the crystal structure, phase composition, oxygen vacancy content, ferroelectric property, dielectric property, leakage property, leakage mechanism, and aging property of the BSFM films were systematically analyzed. X-ray diffraction (XRD) and Raman spectral analyses revealed that the sample had both R3c and Pnma phases. Through additional XRD fitting of the films, the content of the two phases of the sample was analyzed in detail, and it was found that the Pnma phase in the BSFMx = 0 film had the lowest abundance. X-ray photoelectron spectroscopy (XPS) analysis showed that the BSFMx = 0.04 film had the lowest oxygen vacancy content, which was conducive to a decrease in leakage current density and an improvement in dielectric properties. The diffraction peak of (110) exhibited the maximum intensity when the doping amount was 4 mol%, and the minimum leakage current density and a large remanent polarization intensity were also observed at room temperature (2Pr = 91.859 μC/cm). By doping Sm at an appropriate amount, the leakage property of the BSFM films was reduced, the dielectric property was improved, and the aging process was delayed. The performance changes in the BSFM films were further explained from different perspectives, such as phase composition and oxygen vacancy content.
采用溶胶 - 凝胶法在氧化铟锡（ITO）/玻璃衬底上制备了BiSmFeMnO（x = 0、0.02、0.04、0.06；命名为BSFMx）（BSFM）薄膜。系统分析了不同Sm含量对BSFM薄膜的晶体结构、相组成、氧空位含量、铁电性能、介电性能、漏电性能、漏电机制和老化性能的影响。X射线衍射（XRD）和拉曼光谱分析表明，样品同时具有R3c相和Pnma相。通过对薄膜进行额外的XRD拟合，详细分析了样品两相的含量，发现BSFMx = 0薄膜中的Pnma相丰度最低。X射线光电子能谱（XPS）分析表明，BSFMx = 0.04薄膜的氧空位含量最低，这有利于降低漏电流密度并改善介电性能。当掺杂量为4 mol%时，（110）衍射峰强度最大，在室温下还观察到最小漏电流密度和较大的剩余极化强度（2Pr = 91.859 μC/cm²）。通过适量掺杂Sm，降低了BSFM薄膜的漏电性能，改善了介电性能，并延缓了老化过程。从相组成和氧空位含量等不同角度进一步解释了BSFM薄膜的性能变化。
